- 您现在的位置：买卖IC网 > PDF目录378656 > MC10H106P (ON SEMICONDUCTOR) 0.3A, 2.7 to 5.5V Dual (2 In/2 Out) High-Side MOSFET Switch IC, Fault Report, 1 Act-Hi, 1 Act-Lo En 8-SOIC 0 to 85 PDF资料下载
参数资料
| 型号： | MC10H106P |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 通用总线功能 |
| 英文描述： | 0.3A, 2.7 to 5.5V Dual (2 In/2 Out) High-Side MOSFET Switch IC, Fault Report, 1 Act-Hi, 1 Act-Lo En 8-SOIC 0 to 85 |
| 中文描述： | 10H SERIES, TRIPLE 4-INPUT NOR GATE, PDIP16 |
| 封装： | PLASTIC, DIP-16 |
| 文件页数： | 2/3页 |
| 文件大小： | 94K |
| 代理商： | MC10H106P |
MC10H106
2–153
MOTOROLA
MECL Data
DL122 — Rev 6
OUTLINE DIMENSIONS
FN SUFFIX
PLASTIC PLCC PACKAGE
CASE 775–02
ISSUE C
NOTES:
1. DATUMS –L–, –M–, AND –N– DETERMINED
WHERE TOP OF LEAD SHOULDER EXITS PLASTIC
BODY AT MOLD PARTING LINE.
2. DIMENSION G1, TRUE POSITION TO BE
MEASURED AT DATUM –T–, SEATING PLANE.
3. DIMENSIONS R AND U DO NOT INCLUDE MOLD
FLASH. ALLOWABLE MOLD FLASH IS 0.010 (0.250)
PER SIDE.
4. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
5. CONTROLLING DIMENSION: INCH.
6. THE PACKAGE TOP MAY BE SMALLER THAN THE
PACKAGE BOTTOM BY UP TO 0.012 (0.300).
DIMENSIONS R AND U ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS,
GATE BURRS AND INTERLEAD FLASH, BUT
INCLUDING ANY MISMATCH BETWEEN THE TOP
AND BOTTOM OF THE PLASTIC BODY.
7. DIMENSION H DOES NOT INCLUDE DAMBAR
PROTRUSION OR INTRUSION. THE DAMBAR
PROTRUSION(S) SHALL NOT CAUSE THE H
DIMENSION TO BE GREATER THAN 0.037 (0.940).
THE DAMBAR INTRUSION(S) SHALL NOT CAUSE
THE H DIMENSION TO BE SMALLER THAN 0.025
(0.635).
–M–
–N–
–L–
Y BRK
W
V
D
D
S
L–M
M
0.007 (0.180)
N
S
T
S
L–M
M
0.007 (0.180)
N
S
T
S
L–M
S
0.010 (0.250)
N
S
T
X
G1
B
U
Z
VIEW D–D
20
1
S
L–M
M
0.007 (0.180)
N
S
T
S
L–M
M
0.007 (0.180)
N
S
T
S
L–M
S
0.010 (0.250)
N
S
T
C
G
VIEW S
E
J
R
Z
A
0.004 (0.100)
–T–
SEATING
S
L–M
M
0.007 (0.180)
N
S
T
S
L–M
M
0.007 (0.180)
N
S
T
H
VIEW S
K
K1
F
G1
DIM
A
B
C
E
F
G
H
J
K
R
U
V
W
X
Y
Z
G1
K1
MIN
0.385
0.385
0.165
0.090
0.013
0.050 BSC
0.026
0.020
0.025
0.350
0.350
0.042
0.042
0.042
–––
2
0.310
0.040
MAX
0.395
0.395
0.180
0.110
0.019
MIN
9.78
9.78
4.20
2.29
0.33
1.27 BSC
0.66
0.51
0.64
8.89
8.89
1.07
1.07
1.07
–––
2
7.88
1.02
MAX
10.03
10.03
4.57
2.79
0.48
MILLIMETERS
INCHES
0.032
–––
–––
0.356
0.356
0.048
0.048
0.056
0.020
10
0.330
–––
0.81
–––
–––
9.04
9.04
1.21
1.21
1.42
0.50
10
8.38
–––
相关PDF资料 |
PDF描述 |
|---|---|
| MC10H106L | Triple 4-3-3 Input NOR Gate |
| MC10H106P | Triple 4-3-3 Input NOR Gate |
| MC10H107FN | 0.3A, 2.7 to 5.5V Dual (2 Input/ 2 Output) High-Side MOSFET Switch IC, Fault Reporting, 2 Act-Lo En 8-SOIC 0 to 85 |
| MC10H107 | Triple 2-Input Exclusive OR/Exclusive NOR Gate |
| MC10H107L | Triple 2-Input Exclusive OR/Exclusive NOR Gate |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MC10H106PG | 功能描述:逻辑门 Triple 4-3-3 Input NOR RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| MC10H107FN | 功能描述:逻辑门 Triple 2-Input RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| MC10H107FNG | 功能描述:逻辑门 Triple 2-Input XOR/XNOR RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| MC10H107FNR2 | 功能描述:逻辑门 Triple 2-Input RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| MC10H107FNR2G | 功能描述:逻辑门 Triple 2-Input XOR/XNOR RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。