参数资料
型号: MC10H646FN
厂商: ON Semiconductor
文件页数: 3/8页
文件大小: 0K
描述: IC CLK BUFFER 2:8 80MHZ 28-PLCC
产品变化通告: Product Obsolescence 23/Nov/2010
标准包装: 37
类型: 扇出缓冲器(分配)
电路数: 1
比率 - 输入:输出: 2:8
差分 - 输入:输出: 是/无
输入: PECL,TTL
输出: TTL
频率 - 最大: 80MHz
电源电压: 4.75 V ~ 5.25 V
工作温度: 0°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 28-LCC(J 形引线)
供应商设备封装: 28-PLCC(11.51x11.51)
包装: 管件
MC10H646, MC100H646
http://onsemi.com
3
0
100
200
300
400
500
600
700
0
20
40
60
80
100
120
PDynamic = CL VSwing VCC
PTotal = PStatic + PDynamic
Figure 3. Output Structure
INTERNAL TTL GROUND
IGND01
OGND0
Q0A
OVT01
IVT01
INTERNAL TTL POWER
Figure 4. Power versus Frequency (Typical)
FREQUENCY, MHz
POWER,
mW
Power versus Frequency per Bit
300pF
200pF
100pF
50pF
No Load
Table 3. 10H PECL DC CHARACTERISTICS (IVT = OVT = VCCE = 5.0 V ± 5%)
Symbol
Characteristic
Condition
0°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
IINH
Input HIGH Current
255
175
mA
IIL
Input LOW Current
0.5
mA
VIH
Input HIGH Voltage
IVT = IVO =
VCCE = 5.0 V (Note 1)
3.83
4.16
3.87
4.19
3.94
4.28
V
VIL
Input LOW Voltage
IVT = IVO =
VCCE = 5.0 V (Note 1)
3.05
3.52
3.05
3.52
3.05
3.555
V
VBB
Output Reference
Voltage
IVT = IVO =
VCCE = 5.0 V (Note 1)
3.62
3.73
3.65
3.75
3.69
3.81
V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification
limit values are applied individually under normal operating conditions and not valid simultaneously.
1. ECL VIH, VIL and VBB are referenced to VCCE and will vary 1:1 with the power supply. The levels shown are for IVT = IVO = VCCE = 5.0 V
Table 4. 100H PECL DC CHARACTERISTICS (IVT = OVT = VCCE = 5.0 V ± 5%)
Symbol
Characteristic
Condition
0°C
25°C
85°C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
IINH
Input HIGH Current
255
175
mA
IIL
Input LOW Current
0.5
mA
VIH
Input HIGH Voltage
IVT = IVO =
VCCE = 5.0 V (Note 2)
3.835
4.12
3.835
4.12
3.835
V
VIL
Input LOW Voltage
IVT = IVO =
VCCE = 5.0 V (Note 2)
3.19
3.525
3.19
3.525
3.19
3.525
V
VBB
Output Reference
Voltage
IVT = IVO =
VCCE = 5.0 V (Note 2)
3.62
3.74
3.62
3.74
3.62
3.74
V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification
limit values are applied individually under normal operating conditions and not valid simultaneously.
2. ECL VIH, VIL and VBB are referenced to VCCE and will vary 1:1 with the power supply. The levels shown are for IVT = IVO = VCCE = 5.0 V
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