MC144110
MC144111
MOTOROLA
3
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°
C, MC144110
MC144111
MC144111
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Power Dissipation (Per Package)
TA = 85
°
C, MC144110
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30
50
20
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25
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mW
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ELECTRICAL CHARACTERISTICS
(Voltages referenced to VSS, TA = 0 to 85
°
C unless otherwise indicated)
Symbol
Parameter
Test Conditions
VDD
5
10
15
Min
Max
Unit
VIH
High–Level Input Voltage (Din, ENB, CLK)
3.0
3.5
4
—
—
—
V
VIL
Low–Level Input Voltage (Din, ENB, CLK)
5
10
15
—
—
—
0.8
0.8
0.8
V
IOH
IOL
IDD
High–Level Output Current (Dout)
Low–Level Output Current (Dout)
Quiescent Supply Current
Vout = VDD – 0.5 V
Vout = 0.5 V
Iout = 0
μ
A
5
– 200
—
μ
A
5
200
—
μ
A
MC144110
MC144111
15
15
—
—
12
8
mA
Iin
Input Leakage Current (Din, ENB, CLK)
Nonlinearity Voltage (Rn Out)
Vin = VDD or 0 V
See Figure 1
15
—
±
1
μ
A
Vnonl
5
10
15
—
—
—
100
200
300
mV
Vstep
Step Size (Rn Out)
See Figure 2
5
10
15
19
39
58
137
274
411
mV
Voffset
IE
hFE
Offset Voltage from VSS
Emitter Leakage Current
Din = $00, See Figure 1
VRn Out = 0 V
IE = 0.1 to 10.0 mA
TA = 25
°
C
—
—
1
LSB
15
—
10
μ
A
DC Current Gain
—
40
—
—
VBE
Base–to–Emitter Voltage Drop
IE = 1.0 mA
—
0.4
0.7
V
This device contains protection circuitry to
guard against damage due to high static
voltages or electric fields; however, it is ad-
vised that precautions be taken to avoid
application of voltage higher than maximum
rated voltages to this high–impedance circuit.
For proper operation it is recommended that
Vin and Vout be constrained to the range VSS
≤
(Vin or Vout)
≤
VDD.
Unused inputs must always be tied to an
appropriate logic voltage level (e.g., either VSS
or VDD).