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参数资料
| 型号： | MC14578P |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | IC SMOKE COMPARATOR MPWR 16-DIP |
| 标准包装： | 25 |
| 系列： | * |
| 类型： | * |
| 应用： | * |
| 安装类型： | 通孔 |
| 封装/外壳： | 16-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 16-PDIP |
| 包装： | 管件 |
Sensors
Freescale Semiconductor
3
MC14578
Archived by Freescale Semiconductor, Inc., 2009
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Information
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Table 2. Electrical Characteristics
(Voltages Referenced to VSS, Rbias = 3.9 MΩ to VDD, TA = -30° to 70°C Unless Otherwise Indicated)
Characteristic
Symbol
Test Condition
VDD
VDC
Guaranteed
Limit
Unit
Power Supply Voltage Range
VDD
—
3.5 to 14.0
V
Maximum Low-Level Input Voltage, MOSFETs
Wired as Inverters; i.e., IN A tied to IN B, OUT A to
OUT B, OUT C1 to OUT C2
VIL
Vout = 9.0 V, IIoutI <1 μA
10.0
2.0
V
Minimum High-Level Input voltage, MOSFETs
Wired as Inverters; i.e., IN A tied to IN B, OUT A to
OUT B, OUT C1 to OUT C2
VIH
Vout = 1.0 V, IIoutI <1 μA
10.0
8.0
V
Comparator Input Offset Voltage
VIO
TA = 25°C, Over Common Mode Range
10.0
±50
mV
TA = 0° to 50°C, Over Common Mode
Range
3.5 to
14.0
±75
Comparator Common Mode Voltage Range
VCM
3.5 to
14.0
0.7 to
VDD – 1.5
V
Maximum Low-Level Comparator Output Voltage
VOL
IN +: Vin = VSS, IN –: Vin = VDD,
Iout = 30 μA
10.0
0.5
V
Minimum High-Level Comparator Output Voltage
VOH
IN +: Vin = VDD, IN –: Vin= VSS,
Iout = -30 μA
10.0
9.5
V
Buffer Amp Output Offset Voltage
VOO
Rload = 10 MΩ to VDD or VSS, Over
Common Mode Range
—
±100
mV
Maximum Low-Level Input Voltage, MOSFETs
Wired as Inverters; i.e., IN A tied to IN B, OUT A to
OUT B, OUT C1 to OUT C2
VOL
OUT C1, OUT C2, Iout = 1.1 mA
10.0
0.5
V
OUT A, OUT B, Iout = 270 μA
10.0
0.5
V
Minimum High-Level Input Voltage, MOSFETs
Wired as Inverters; i.e., IN A tied to IN B, OUT A to
OUT B, OUT C1 to OUT C2
VOH
OUT C1, OUT C2, Iout = -1.1 mA
10.0
9.5
V
OUT A, OUT B, Iout = 270 μA
10.0
9.5
V
Maximum Input Leakage
IN + (DIP Only)
Current
Iin
TA = 25°C, 40% R.H.,
Vin = VSS or VDD
10.0
±1.0
pA
IN + (DIP Only)
TA = 50°C,
Vin = VSS or VDD
10.0
±6.0
IN + (SOG), IN A, IN B, IN C, IN –
Vin = VSS or VDD
10.0
±40
nA
Maximum Off-State MOSFET Leakage Current
IOZ
IN A, IN C: Vin = VDD,
OUT A, OUT C2: Vout = VSS or VDD
10.0
±100
nA
IN B, IN C: Vin = VSS,
OUT B, OUT C1: Vout = VSS or VDD
10.0
±100
Maximum Quiescent Current
IDD
TA = 25°C
IN A, IN B, IN C: Vin = VSS or VDD,
IVIN + – VIN – I = 100 mV
Iout = 0 μA
10.0
10
μA
Maximum Input Capacitance
IN +
Other Inputs
Cin
f = 1 kHz
—
5.0
15
pF
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