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参数资料
| 型号： | MC33064SN-5T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/11页 |
| 文件大小： | 0K |
| 描述： | IC SENSING CIRCT 5V UV 5TSOP |
| 标准包装： | 1 |
| 类型： | 简单复位/加电复位 |
| 监视电压数目： | 1 |
| 输出： | 开路漏极或开路集电极 |
| 复位： | 低有效 |
| 电压 - 阀值： | 4.6V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSOP（0.059"，1.50mm 宽）5 引线 |
| 供应商设备封装： | 5-TSOP |
| 包装： | 剪切带 (CT) |
| 其它名称： | MC33064SN-5T1GOSCT |
MC34064, MC33064, NCV33064
80
V in = 0 V
T A = 25 ° C
60
40
20
0
0
0.4
0.8 1.2
1.6
V F , FORWARD VOLTAGE (V)
Figure 8. Clamp Diode Forward Current versus Voltage
+
Power
Supply
Input
R
Reset
Microprocessor
Circuit
-
-
C DLY
+
A time delayed reset can be accomplished with the
1.2 V ref
GND
addition of C DLY . For systems with extremely fast
power supply rise times (<500 ns) it is recommended
that the RC DLY time constant be greater than 5.0 m s.
V th(MPU) is the microprocessor reset input threshold.
1
t DLY = RC DLY In
1-
V th(MPU)
V in
Figure 9. Low Voltage Microprocessor Reset
TEST DATA
R H
V H
(mV)
D V th
(mV)
R H
( W )
R L
(k W )
+
Power
Supply
I in
Input
R L
Reset
Microprocessor
Circuit
20
51
40
81
0
3.4
6.8
6.8
0
10
20
20
0
1.5
4.7
1.5
V H ≈
-
-
+
1.2V ref
GND
4.6 R H
+ 0.02
R L
D V th(lower) ≈ 340 R H x 10 -6
Where: R H ≤ 150 W
Where: R L ≥ 1.5 W , ≤ 10 k W
71
112
100
164
190
327
276
480
10
10
16
16
34
34
51
51
30
30
47
47
100
100
150
150
2.7
1.5
2.7
1.5
2.7
1.5
2.7
1.5
Comparator hysteresis can be increased with the addition of resistor R H . The hysteresis equation has been
simplified and does not account for the change of input current I in as V CC crosses the comparator threshold
(Figure 4). An increase of the lower threshold D V th(lower) will be observed due to I in which is typically 340 m A at
4.59 V. The equations are accurate to ± 10% with R H less than 150 W and R L between 1.5 k W and 10 k W .
Figure 10. Low Voltage Microprocessor Reset with Additional Hysteresis
http://onsemi.com
4
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