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参数资料
| 型号： | MC33151VDR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER DUAL HS 8-SOIC |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 2,500 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 35ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 6.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
MC34151, MC33151
MAXIMUM RATINGS
Rating
Power Supply Voltage
Logic Inputs (Note 1)
Drive Outputs (Note 2)
Totem Pole Sink or Source Current
Diode Clamp Current (Drive Output to V CC )
Symbol
V CC
V in
I O
I O(clamp)
Value
20
? 0.3 to V CC
1.5
1.0
Unit
V
V
A
Power Dissipation and Thermal Characteristics
D Suffix SOIC ? 8 Package Case 751
Maximum Power Dissipation @ T A = 50 ° C
Thermal Resistance, Junction ? to ? Air
P Suffix 8 ? Pin Package Case 626
Maximum Power Dissipation @ T A = 50 ° C
Thermal Resistance, Junction ? to ? Air
Operating Junction Temperature
Operating Ambient Temperature
MC34151
MC33151
MC33151V
Storage Temperature Range
Electrostatic Discharge Sensitivity (ESD) (Note 3)
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
P D
R q JA
P D
R q JA
T J
T A
T stg
ESD
0.56
180
1.0
100
+150
0 to +70
? 40 to +85
? 40 to +125
? 65 to +150
2000
200
1500
W
° C/W
W
° C/W
° C
° C
° C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. For optimum switching speed, the maximum input voltage should be limited to 10 V or V CC , whichever is less.
2. Maximum package power dissipation limits must be observed.
3. ESD protection per JEDEC Standard JESD22 ? A114 ? F for HBM
per JEDEC Standard JESD22 ? A115 ? A for MM
per JEDEC Standard JESD22 ? C101D for CDM.
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
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| MC33151VDR2G | 功能描述:功率驱动器IC 1.5A High Speed Dual Inverting MOSFET RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MC33152 | 制造商:SPC Multicomp 功能描述:FUSE RESETTABLE RADIAL 4A 制造商:SPC Multicomp 功能描述:FUSE, PTC RESET, RADIAL, 16V, 4A 制造商:SPC Multicomp 功能描述:FUSE, PTC RESET, 16V, 4A, RADIAL; Holding Current:4A; Tripping Current:6.8A; Initial Resistance Max:0.063ohm; Operating Voltage:16V; PTC Fuse Case:Radial Leaded; External Depth:3mm; Initial Resistance Min:0.02ohm; Lead Spacing:5.1mm ;RoHS Compliant: Yes |
| MC33152 | 制造商:SPC Multicomp 功能描述:PTC Resettable Fuse |
| MC33152D | 功能描述:功率驱动器IC 1.5A High Speed Dual RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MC33152DG | 功能描述:功率驱动器IC 1.5A High Speed Dual Non-Inverting MOSFET RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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