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参数资料
| 型号： | MC33153P |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/14页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER GATE SINGLE IGBT 8DIP |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 1,000 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 80ns |
| 电流 - 峰： | 1A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 11.7 V ~ 20 V |
| 工作温度： | -40°C ~ 105°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
| 其它名称： | MC33153POS |
MC33153
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Power Supply Voltage
V CC to V EE
Kelvin Ground to V EE (Note 1)
V CC ? V EE
KGND ? V EE
20
V
Logic Input
Current Sense Input
Blanking/Desaturation Input
Gate Drive Output
Source Current
Sink Current
Diode Clamp Current
Fault Output
Source Current
Sink Current
Power Dissipation and Thermal Characteristics
D Suffix SO ? 8 Package, Case 751
Maximum Power Dissipation @ T A = 50 ° C
Thermal Resistance, Junction ? to ? Air
P Suffix DIP ? 8 Package, Case 626
Maximum Power Dissipation @ T A = 50 ° C
Thermal Resistance, Junction ? to ? Air
Operating Junction Temperature
Operating Ambient Temperature
Storage Temperature Range
Electrostatic Discharge Sensitivity (ESD) (Note 2)
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
V in
V S
V BD
I O
I FO
P D
R q JA
P D
R q JA
T J
T A
T stg
ESD
V EE ? 0.3 to V CC
? 0.3 to V CC
? 0.3 to V CC
1.0
2.0
1.0
25
10
0.56
180
1.0
100
+150
? 40 to +105
? 65 to +150
2500
250
1500
V
V
V
A
mA
W
° C/W
W
° C/W
° C
° C
° C
V
NOTE: ESD data available upon request.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Kelvin Ground must always be between V EE and V CC .
2. ESD protection per JEDEC Standard JESD22 ? A114 ? F for HBM
per JEDEC Standard JESD22 ? A115 ? A for MM
per JEDEC Standard JESD22 ? C101D for CDM.
ELECTRICAL CHARACTERISTICS (V CC = 15 V, V EE = 0 V, Kelvin GND connected to V EE . For typical values T A = 25 ° C,
for min/max values T A is the operating ambient temperature range that applies (Note 3), unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
LOGIC INPUT
Input Threshold Voltage
High State (Logic 1)
Low State (Logic 0)
Input Current
High State (V IH = 3.0 V)
Low State (V IL = 1.2 V)
V IH
V IL
I IH
I IL
?
1.2
?
?
2.70
2.30
130
50
3.2
?
500
100
V
m A
DRIVE OUTPUT
Output Voltage
Low State (I Sink = 1.0 A)
High State (I Source = 500 mA)
Output Pull ? Down Resistor
V OL
V OH
R PD
?
12
?
2.0
13.9
100
2.5
?
200
V
k W
FAULT OUTPUT
Output Voltage
Low State (I Sink = 5.0 mA)
High State (I Source = 20 mA)
V FL
V FH
?
12
0.2
13.3
1.0
?
V
3. Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.
T low = ? 40 ° C for MC33153 T high = +105 ° C for MC33153
http://onsemi.com
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