参数资料
型号: MC33179DR2G
厂商: ON Semiconductor
文件页数: 15/19页
文件大小: 0K
描述: IC OPAMP QUAD LP LO NOISE 14SOIC
标准包装: 1
放大器类型: 通用
电路数: 4
转换速率: 2 V/µs
增益带宽积: 5MHz
电流 - 输入偏压: 100nA
电压 - 输入偏移: 1500µV
电流 - 电源: 1.7mA
电流 - 输出 / 通道: 100mA
电压 - 电源,单路/双路(±): 4 V ~ 36 V,±2 V ~ 18 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 14-SOIC(0.154",3.90mm 宽)
供应商设备封装: 14-SOICN
包装: 标准包装
产品目录页面: 1130 (CN2011-ZH PDF)
其它名称: MC33179DR2GOSDKR
MC33178, MC33179
http://onsemi.com
5
AC ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = 15 V, TA = 25°C, unless otherwise noted.)
Characteristics
Figure
Symbol
Min
Typ
Max
Unit
Slew Rate
(Vin = 10 V to +10 V, RL = 2.0 kW, CL = 100 pF, AV = +1.0 V)
SR
1.2
2.0
V/ms
Gain Bandwidth Product (f = 100 kHz)
GBW
2.5
5.0
MHz
AC Voltage Gain (RL = 600 W, VO = 0 V, f = 20 kHz)
AVO
50
dB
Unity Gain Bandwidth (OpenLoop) (RL = 600 W, CL = 0 pF)
BW
3.0
MHz
Gain Margin (RL = 600 W, CL = 0 pF)
Am
15
dB
Phase Margin (RL = 600 W, CL = 0 pF)
fm
60
Deg
Channel Separation (f = 100 Hz to 20 kHz)
CS
120
dB
Power Bandwidth (VO = 20 Vpp, RL = 600 W, THD ≤ 1.0%)
BWp
32
kHz
Total Harmonic Distortion (RL = 600 W,, VO = 2.0 Vpp, AV = +1.0 V)
(f = 1.0 kHz)
(f = 10 kHz)
(f = 20 kHz)
THD
0.0024
0.014
0.024
%
Open Loop Output Impedance
(VO = 0 V, f = 3.0 MHz, AV = 10 V)
|ZO|
150
W
Differential Input Resistance (VCM = 0 V)
Rin
200
kW
Differential Input Capacitance (VCM = 0 V)
Cin
10
pF
Equivalent Input Noise Voltage (RS = 100 W,)
f = 10 Hz
f = 1.0 kHz
en
8.0
7.5
nV/ Hz
Equivalent Input Noise Current
f = 10 Hz
f = 1.0 kHz
in
0.33
0.15
pA/ Hz
Figure 2. Maximum Power Dissipation
versus Temperature
Figure 3. Input Offset Voltage versus
Temperature for 3 Typical Units
P(MAX),
MAXIMUM
POWER
DISSIP
A
TION
(mW)
D
TA, AMBIENT TEMPERATURE (°C)
60 40 20
0
20
40
60
80
100 120
180
160
140
MC33178P/9P
MC33179D
MC33178D
V,
INPUT
OFFSET
VOL
TAGE
(mV)
IO
TA, AMBIENT TEMPERATURE (°C)
55
25
0
25
50
75
100
125
Unit 1
Unit 2
Unit 3
VCC = +15 V
VEE = 15 V
RS = 10 W
VCM = 0 V
2400
2000
1600
1200
800
400
0
4.0
3.0
2.0
1.0
0
1.0
2.0
3.0
4.0
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