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参数资料
| 型号： | MC33286 |
| 厂商： | 飞思卡尔半导体(中国)有限公司 |
| 英文描述： | Dual High Side Driver(双高端驱动器) |
| 中文描述： | 双通道高侧驱动器（双高端驱动器） |
| 文件页数： | 5/8页 |
| 文件大小： | 320K |
| 代理商： | MC33286 |
MC33286
FUNCTIONAL DESCRIPTION
For More Information On This Product,
Go to: www.freescale.com
5
General Information
This device is a dual high side power switch dedicated for
automotive applications. In comparison with mechanical
relays, this device offers higher reliability as well as protection
and diagnostic features. It has been designed to be directly
connected to the battery voltage.
In the future, the number of electronic switches directly
connected to the battery will increase, so the MC33286
includes a special input trigger and architecture which allows
to have a very low standby current when the V
bat
is lower than
12V.
The MC33286 concept uses a dual chip approach packaged
in a single SO20 package. This low power package can be used
because the ON resistance of the switch (35m
max at 25
°
C)
guarantees a low power dissipation (less than 300mW) when
driving two 21Watts lamps. The two chips are internally connected
by die to die wire bonding to allow the transfer of analog and
control information between the two dice.
The two chips are the Control and Power dice.
The
Control
chip
uses
technology. The two channels of this control chip are totally
symmetrical and independant. It drives the gate of the output
power MOSFET and manages the analog information from the
power MOSFET die to ensure power device protection.
The Power chip uses the HDTMOS3 technology. It has
one independent sources plus current sensing cells for open
load detection and current limitation. In addition, a thermal
sensor (diode) is located in the middle of each source to
protect the MC33286 against overtemperature. The drain of
the Power die is connected to the battery voltage by the lead
frame of the package. This lead frame has been especially
developed and has eight pins connected together to the V
bat
.
These pins are used as the V
bat
connection as well as thermal
path.
the
SMARTMOS3.5NVM
Supply Voltage
The MC33286 can be directly connected to the V
bat
line.
Figure 4 shows the supply voltage characteristics. The V
batc
(V
bat
of Control die, pin 10) and V
bat
(V
bat
of power die, pins 1,
2, 5, 6, 15, 16, 19, 20) are not internally connected, so the V
bat
and V
batc
have to be connected externally by the printed
circuit board.
Under Voltage
Figure 4 also shows the supply voltage characteristic
when one or two sides of the MC33286 are turned on. From
0V to undervoltage level (7V typical), all blocks of the
MC33286 are not totally supplied. The undervoltage threshold
value versus temperature is shown in Figure 2.The under
voltage function allows the turn-off of the output transistor,
because the V
bat
voltage will be not enough to guarantee the
full on state of the output transistor due to an incomplete drive
of the gate. When the V
bat
is greater than the undervoltage
threshold, the supply current increases due to the charge
pump start up and MOSFET driver activation.
Reverse Battery Protection
When a negative battery voltage arises, the current flows
in a reverse direction from the source region to drain region of
both of the MosFets through the body diode. The limitation is
then the temperature reached by the junction, which is linked
to the thermal impedance from the junction to the ambiant.
Input Trigger
The MC33286 has a special input trigger circuitry allowing
the device to have less than 0.5μA typical standby current.
When the input level is below 1.5V, the circuit is in sleep mode
(see Figure 4).
Status Output
The output status is an open drain structure, active at low
level, so an external pull-up resistor is required to read the
status information.
The status indicates the open load and the over
temperature information. The output short-circuit, current
limitation and V
bat
undervoltage are not reported on the status
pin. But an output short-circuit to Gnd will be detected by an
overtemperature because the total power dissipation of the
device will make it reach the thermal detection.
Open Load Function
The open load detection is active during the ON phase (Hot
open load detection). An amplifier measures the differential volt-
age between V
bat
and V
out
(this value is typically 400mA) at
25
°
C.
An open load condition will create a voltage lower than 12mV
and the open load circuitry will detect it and will pull down the sta-
tus output. If the open load condition is present before the device
turn-on, the status will be pulled down after a delay due to the rise
time of the output.
Overcurrent Function (High Current Limitation)
The device incorporates a current limitation at 30 Amps
typical when outputs are loaded (Vout > 1V) . A 21 Watts lamp
has a nominal current of about 2 amp and at turn on, the
MC33286 has to drive a peak current of about 12A, as the
lamp inrush current is about six times the nominal DC current.
A standard current limitation set up at 30A will not being
activated during the inrush current of one lamp but will protect
the circuit against overcurrent. Figure 3 shows the overcurrent
threshold versus temperature.
Short Circuit Protection (Low Current Limitation)
During a hard short-circuit to Gnd, the power dissipation
would be 30A x 14V = 420 Watts if only the overcurrent
limitation exists. The thermal protection will be activated and
switch the device off. Nevertheless the peak power
dissipation and energy is quite high.
Therefore, a short circuit
implemented and is activated when the output voltage is lower
than about 1V . As shown in the Figure 5, the low current
limitation decreases with temperature. In the case of a short
circuit, the power dissipated in the device decreases with time
due to the decay of the current limitation with temperature.
protection has been
Overtemperature Function
The overtemperature function uses a thermal sensor
located in the middle of each output power HDTMOS
transistor. The sensor is a diode connected to V
bat
in the
power die. The diode forward voltage varies of -2mV/
°
C. So,
by measuring the diode voltage the power output MOSFET
temperature is monitored. This diode voltage information is
transferred to the control die and compared to a reference
voltage generated from the band gap reference generator.
When the temperature reaches the overtemp threshold, the
circuit is turned off. As the input voltage is still high, the circuit
is not in wake mode but the current consumption decreases
due to the turn-off of the charge pump. The overtemperature
Freescale Semiconductor, Inc.
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