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参数资料
| 型号： | MC33290DR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 其它接口 |
| 英文描述： | ISO SERIAL LINK INTERFACE |
| 中文描述： | SPECIALTY INTERFACE CIRCUIT, PDSO8 |
| 封装： | PLASTIC, SOIC-8 |
| 文件页数： | 2/4页 |
| 文件大小： | 119K |
| 代理商： | MC33290DR2 |
MC33290
2
MOTOROLA ANALOG IC DEVICE DATA
Figure 1. Simplified Block Diagram
VBB
CEN
VDD
Tx
Rx
6
ISO
4
Gnd
3
40 V
Thermal
Shutdown
RHys
Master
Bias
1
8
7
5
MAXIMUM RATINGS
(
All voltages are with respect to ground, unless otherwise noted.)
Rating
Symbol
Value
Unit
áááááááááááááááááááááá
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Machine Model (Note 3)
VDD DC Supply Voltage
VBB Load Dump Peak Voltage
ISO Pin Load Dump Peak Voltage
VESD1
VESD2
TC
PD
Tsolder
R
VDD
VBB(LD)
VISO
IISO(LIM)
2000
200
–0.3 to 7.0
V
áááááááááááááááááááááá
ISO Short Circuit Current Limit
45
V
40
V
1.0
A
ESD Voltage (Note 1)
V
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áááááááááááááááááááááá
áááááááááááááááááááááá
áááááááááááááááááááááá
áááááááááááááááááááááá
áááááááááááááááááááááá
NOTES:
1.ESD data available upon request.
2.Testing in accordance with Human Body Model (CZap = 100 pF, RZap = 1500
).
3.Testing in accordance with Machine Model (CZap = 100 pF, RZap = 0
).
4.Non–repetitive clamping capability at 25
°
C.
ISO Clamp Energy (Note 4)
10
mJ
Storage Temperature
Operating Case Temperature
Operating Junction Temperature
Power Dissipation (TA = 25
°
C)
Soldering Temperature (for 10 seconds)
–55 to +150
–40 to +125
–40 to +150
0.8
260
150
°
C
°
C
°
C
W
°
C
°
C/W
áááááááááááááááááááááá
áááááááááááááááááááááá
Thermal Resistance (Junction–to–Ambient)
ELECTRICAL CHARACTERISTICS
(Characteristics noted under conditions of 4.75 V
≤
VDD
≤
5.25 V, 8.0 V
≤
VBB,
HSIP
≤
18.0 V, –40
°
C
≤
TC
≤
125
°
C, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
áááááááááááááááááááááááááááááááá
á
áááááááááááááááááááá
á
áááááááááááááááááááá
á
ááááááááááááááááááááááá
áááááááááááááááááááááá
Input Low Voltage Threshold (Note 2)
áááááááááááááááááá
VRSM = VRSP = 0 V, Tx = 0.8 VDD, CEN = 0.3 VDD)
ááá
áááááááááááá
–
á
áá
á
áá
ááááááááááá
á
á
0.3 VDD
–
á
ááá
á
á
–
–
á
á
á
áááááááááááááááááá
ááá
ááá
VIL(CEN)
LSIP = 0.3 V, VRSM = 0 V, VRSP = –0.5 V, Tx = 0.2 VDD, CEN = 0.7 VDD)
á
–
ááá
á
áááááá
ááá
–
á
á
V
1.0
ááá
á
á
áááááááááááááááááááááááááááááááá
VBB Sleep State Current (VBB = 16 V, HSIM = HSIP, LSIM = LSIP = 0 V,
IBB(SS)
áá
–
–
ááá
50
μ
A
áááááááááááááááááá
LSIP = 0.3 V, VRSM = 0 V, VRSP = –0.5 V, Tx = 0.2 VDD, CEN = 0.7 VDD)
á
á
á
–
á
á
Input High Voltage Threshold (Note 1)
NOTES:
1.When IBB transitions to >100
μ
A.
2.When IBB transitions to <100
μ
A.
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