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参数资料
| 型号： | MC33349N-4R1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 电源管理 |
| 英文描述： | Lithium Battery Protection Circuit for One Cell Battery Packs |
| 中文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO6 |
| 封装： | LOW PROFILE, SOT-23, 6 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 109K |
| 代理商： | MC33349N-4R1 |
MC33349
3
MOTOROLA ANALOG IC DEVICE DATA
ELECTRICAL CHARACTERISTICS
(Ct = 0.01
μ
F, TA = 25
°
C, for min/max values TA is the operating junction temperature range
that applies, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
VOLTAGE SENSING
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–1, –3 Suffix
–2, –4 Suffix
Overvoltage Hysteresis VCell Decreasing
Cell Discharging Cutoff (Pin 5 to Pin 6)
Undervoltage Threshold, VCell Decreasing
–1, –3 Suffix
–2, –4 Suffix
4.35
4.25
200
–
–
–
V
–
–
–
VH
mV
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Vth(UV)
V
–
–
2.30
2.28
–
–
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Overvoltage Delay Time (Vcell = 4.5 V)
Unervoltage Delay Time (Vcell = 2.1 V)
Cell Voltage Sampling Period
Input Bias Current During Cell Voltage Sample (Pin 5)
t(ovd)
t(uvd)
t(smpl)
t(rep)
IIIB
–
75
20
–
–
ms
μ
A
–
–
13
–
ms
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Cell Voltage Sampling Repitition Period
–
26
2.0
–
–
ms
ms
–
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–1, –2 Suffix
–3, –4 Suffix
Discharge Current Hysteresis
Charge Threshold Voltage
–1. –2 Suffix
–3, –4 Suffix
Charge Current Hysteresis
CURRENT SENSING
–
–
–
150
75
50
–
–
–
DCH
Vth(chg)
%
mV
–
–
–
–150
–75
25
–
–
–
CCH
%
Current Limit Delay Time (1.0 nF load @ CO & DO; to VDD/2)
Charge Gate Drive Output (Pin 3)
t(ccld)
–
10
–
μ
s
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TOTAL DEVICE
–
8.5
–
μ
A
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