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参数资料
| 型号： | MC3346P |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 CHANNEL, Si, NPN, RF POWER TRANSISTOR |
| 封装： | PLASTIC, DIP-14 |
| 文件页数： | 2/8页 |
| 文件大小： | 49K |
| 代理商： | MC3346P |
MC3346
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted.)
Characteristics
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTICS
Collector–Base Breakdown Voltage
(IC = 10 Adc)
V(BR)CBO
20
60
–
Vdc
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc)
V(BR)CEO
15
–
Vdc
Collector–Substrate Breakdown Voltage
(IC = 10 A)
V(BR)CIO
20
60
–
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc)
V(BR)EBO
5.0
7.0
–
Vdc
Collector–Base Cutoff Current
(VCB = 10 Vdc, IE = 0)
ICBO
–
40
nAdc
DC Current Gain
(IC = 10 mAdc, VCE = 3.0 Vdc)
(IC = 1.0 mAdc, VCE = 3.0 Vdc)
(IC = 10 Adc, VCE = 3.0 Vdc)
hFE
–
40
–
140
130
60
–
Base–Emitter Voltage
(VCE = 3.0 Vdc, IE = 1.0 mAdc)
(VCE = 3.0 Vdc, IE = 10 mAdc)
VBE
–
0.72
0.8
–
Vdc
Input Offset Current for Matched Pair Q1 and Q2
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
|IIO1 – IIO2|
–
0.3
2.0
Adc
Magnitude of Input Offset Voltage
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
–
0.5
5.0
mVdc
Temperature Coefficient of Base–Emitter Voltage
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
VBE
T
D
–
–1.9
–
mV/
°C
Temperature Coefficient
VIO
T
D
–
1.0
–
V/°C
Collector–Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
ICEO
–
0.5
Adc
DYNAMIC CHARACTERISTICS
Low Frequency Noise Figure
(VCE = 3.0 Vdc, IC = 100 Adc, RS = 1.0 k, f = 1.0 kHz)
NF
–
3.25
–
dB
Forward Current Transfer Ratio
(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hFE
–
110
–
Short Circuit Input Impedance
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
hie
–
3.5
–
k
Open Circuit Output Impedance
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
hoe
–
15.6
–
mhos
Reverse Voltage Transfer Ratio
(VCE = 3.0 Vdc, IC = 1.0 mAdc)
hre
–
1.8
–
x10–4
Forward Transfer Admittance
(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 MHz)
yfe
–
31–j1.5
–
Input Admittance
(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 MHz)
yie
–
0.3 + j0.04
–
Output Admittance
(VCE = 3.0 Vdc, IC = 1.0 mAdc, f = 1.0 MHz)
yoe
–
0.001 + j0.03
–
Current–Gain – Bandwidth Product
(VCE = 3.0 Vdc, IC = 3.0 mAdc)
fT
300
550
–
MHz
Emitter–Base Capacitance
(VEB = 3.0 Vdc, IE = 0)
Ceb
–
0.6
–
pF
Collector–Base Capacitance
(VCB = 3.0 Vdc, IC = 0)
Ccb
–
0.58
–
pF
Collector–Substrate Capacitance
(VCS = 3.0 Vdc, IC = 0)
CCI
–
2.8
–
pF
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