参数资料
型号: MC33501SNT1G
厂商: ON Semiconductor
文件页数: 10/14页
文件大小: 0K
描述: IC OPAMP SINGLE R-R 1V 5TSOP
产品变化通告: Product Obsolescence 29/Oct/2010
标准包装: 1
系列: SMARTMOS™
放大器类型: 通用
电路数: 1
输出类型: 满摆幅
转换速率: 3 V/µs
增益带宽积: 4MHz
电流 - 输入偏压: 0.04pA
电压 - 输入偏移: 500µV
电流 - 电源: 1.65mA
电流 - 输出 / 通道: 70mA
电压 - 电源,单路/双路(±): 1 V ~ 7 V,±0.5 V ~ 3.5 V
工作温度: -40°C ~ 105°C
安装类型: 表面贴装
封装/外壳: 6-TSOP(0.059",1.50mm 宽)5 引线
供应商设备封装: 5-TSOP
包装: 剪切带 (CT)
其它名称: MC33501SNT1GOSCT
MC33501, MC33503
http://onsemi.com
5
AC ELECTRICAL CHARACTERISTICS (VCC = 5.0 V, VEE = 0 V, VCM = VO = VCC/2, TA = 25°C, unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Slew Rate (VS = ±2.5 V, VO = 2.0 to 2.0 V, RL = 2.0 kW, AV = 1.0)
SR
V/
ms
Positive Slope
1.8
3.0
6.0
Negative Slope
1.8
3.0
6.0
Gain Bandwidth Product (f = 100 kHz)
GBW
MHz
VCC = 0.5 V, VEE = 0.5 V
2.0
3.0
6.0
VCC = 1.5 V, VEE = 1.5 V
2.5
3.5
7.0
VCC = 2.5 V, VEE = 2.5 V
3.0
4.0
8.0
Gain Margin (RL =10 kW, CL = 0 pF)
Am
6.5
dB
Phase Margin (RL = 10 kW, CL = 0 pF)
fm
60
Deg
Channel Separation (f = 1.0 Hz to 20 kHz, RL = 600 W)
CS
120
dB
Power Bandwidth (VO = 4.0 Vpp, RL = 1.0 kW, THD ≤1.0%)
BWP
200
kHz
Total Harmonic Distortion (VO = 4.5 Vpp, RL = 600 W, AV = 1.0)
THD
%
f = 1.0 kHz
0.004
f = 10 kHz
0.01
Differential Input Resistance (VCM = 0 V)
Rin
>1.0
terra
W
Differential Input Capacitance (VCM = 0 V)
Cin
2.0
pF
Equivalent Input Noise Voltage (VCC = 1.0 V, VCM = 0 V, VEE = GND,
en
nV/
√Hz
RS = 100 W)
f = 1.0 kHz
30
Figure 2. Representative Block Diagram
Offset
Voltage
Trim
Output
Voltage
Saturation
Detector
Body
Bias
Clamp
VCC
IN
Out
IN+
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MC33501SNT1G 制造商:ON Semiconductor 功能描述:OP AMP SINGLE R/R SMD SOT23-5
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