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参数资料
| 型号： | MC34152PG |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER DUAL HS 8DIP |
| 标准包装： | 50 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 55ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 6.1 V ~ 18 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 8-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 8-PDIP |
| 包装： | 管件 |
| 产品目录页面： | 1128 (CN2011-ZH PDF) |
| 其它名称： | MC34152PGOS |
MC34152, MC33152, NCV33152
3.0
High State Clamp (Drive
2.0
Output Driven Above V CC )
V CC = 12 V
80 m s Pulsed Load
120 Hz Rate
T A = 25 ° C
1.0
0
0
V CC
Low State Clamp (Drive
GND
Output Driven Below Ground)
-1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I O , OUTPUT CLAMP CURRENT (A)
Figure 8. Drive Output Clamp Voltage
versus Clamp Current
0
-1.0
- 2.0
V CC
Source Saturation V CC = 12 V
(Load to Ground) 80 m s Pulsed Load
120 Hz Rate
T A = 25 ° C
0
- 0.5
- 0.7
- 0.9
-1.1
Source Saturation
(Load to Ground)
V CC = 12 V
V CC
I source = 10 mA
I source = 400 mA
- 3.0
1.9
3.0
1.7
I sink = 400 mA
2.0
1.0
0
0
0.2
0.4
Sink Saturation
(Load to V CC )
0.6 0.8
GND
1.0
1.2
1.4
1.5
1.0
0.8
0.6
0
- 55
Sink Saturation
(Load to V CC )
- 25
0
GND
25
50
75
I sink = 10 mA
100 125
I O , OUTPUT CLAMP CURRENT (A)
Figure 9. Drive Output Saturation Voltage
versus Load Current
T A , AMBIENT TEMPERATURE ( ° C)
Figure 10. Drive Output Saturation Voltage
versus Temperature
V CC = 12 V
90% -
V CC = 12 V
V in = 0 V to 5.0 V
90% -
V in = 0 V to 5.0 V
C L = 1.0 nF
T A = 25 ° C
10% -
C L = 1.0 nF
T A = 25 ° C
10 ns/DIV
Figure 11. Drive Output Rise Time
10% -
http://onsemi.com
5
10 ns/DIV
Figure 12. Drive Output Fall Time
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