参数资料
| 型号： | MC34164DM-3R2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/12页 |
| 文件大小： | 0K |
| 描述： | IC SENSOR UNDERVOLTAGE 3V MICRO8 |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 4,000 |
| 类型： | 简单复位/加电复位 |
| 监视电压数目： | 1 |
| 输出： | 开路漏极或开路集电极 |
| 复位： | 低有效 |
| 电压 - 阀值： | 2.71V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | Micro8? |
| 包装： | 带卷 (TR) |
| 其它名称： | MC34164DM-3R2OS |
MC34164, MC33164, NCV33164
Power
Supply
I in
R H
V in
R L
Reset
Microprocessor
Circuit
V H
(mV)
60
103
Test Data
D V th R H
(mV) ( W )
0 0
1.0 100
R L
(k W )
43
10
123
160
155
1.0
1.0
2.2
100
100
220
6.8
4.3
10
1.2 V ref
V H ≈
4.3 R H
R L
+ 0.06
199
280
262
2.2
2.2
4.7
220
220
470
6.8
4.3
10
MC3X164-5
GND
D V th(lower) ≈ 10 R H x 10 - 6
where: R H ≤ 1.0 k W
43 k W ≥ R L ≥ 4.3 k W
306
357
421
530
4.7
4.7
4.7
4.7
470
470
470
470
8.2
6.8
5.6
4.3
Comparator hysteresis can be increased with the addition of resistor R H . The hysteresis equation has been simplified and does not account for the change of input current
I in as V in crosses the comparator threshold (Figure 8). An increase of the lower threshold D V th(lower) will be observed due to I in which is typically 10 m A at 4.3 V. The
equations are accurate to ± 10% with R H less than 1.0 k W and R L between 4.3 k W and 43 k W .
Figure 15. Low Voltage Microprocessor Reset With Additional Hysteresis
(MC3X164 ? 5 Shown)
Power
Supply
Input
1.0 k
Input
Reset
Reset
Solar
Cells
1.2 V ref
1.2 V ref
GND
GND
Figure 16. Voltage Monitor
Figure 17. Solar Powered Battery Charger
V CC
R L
4.3V
270
MTP3055EL
Input
Reset
Overheating of the logic level power MOSFET due to insufficient
gate voltage can be prevented with the above circuit. When the
input signal is below the 4.3 V threshold of the MC3X164-5, its
1.2 V ref
output grounds the gate of the L 2 MOSFET.
GND MC3X164-5
Figure 18. MOSFET Low Voltage Gate Drive Protection Using the MC3X164 ? 5
http://onsemi.com
6
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MC34164DM-3R2G | 功能描述:监控电路 2.65V UnderVoltage Sensing Circuit RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MC34164DM-5 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:MICROPOWER UNDERVOLTAGE SENSING CIRCUITS |
| MC34164DM-5R2 | 功能描述:监控电路 4.27V UnderVoltage RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MC34164DM-5R2G | 功能描述:监控电路 4.27V UnderVoltage Sensing Circuit RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MC34164DMTANDR | 制造商:Microsemi Corporation 功能描述:UNDERVOLTAGE SENSING CIRCUIT |
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