参数资料
| 型号： | MC3423DG |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/10页 |
| 文件大小： | 0K |
| 描述： | IC SENSOR UNDERVOLTAGE 8SOIC |
| 产品变化通告： | Product Obsolescence 01/Jul/2009 |
| 标准包装： | 98 |
| 系列： | MC3423 |
| 技术： | 混合技术 |
| 电路数： | 2 |
| 应用： | 通用 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 管件 |
| 其它名称： | MC3423DGOS |
MC3423
1
+
30
Power
Supply
6
R2 = 2.7 k
Max
Typ
#1
7
R1
10k
?
20
10
Min
1
+
Power
Supply
#2
7
5
Q1
1.0k
?
0
0
5.0 10 15 20 25
V T , TRIP VOLTAGE (V)
Figure 9. R1 versus Trip Voltage
30
Figure 8. Circuit Configuration for
Activating One MC3423 from Another
35
Note that both supplies have their negative output
leads tied together (i.e., both are positive supplies). If
their positive leads are common (two negative supplies)
the emitter of Q1 would be moved to the positive lead of
supply 1 and R1 would therefore have to be resized to
deliver the appropriate drive to Q1.
Crowbar SCR Considerations
Referring to Figure 11, it can be seen that the crowbar
30
25
20
15
R G(min) = 0
if V CC < 11 V
SCR, when activated, is subject to a large current surge
from the output capacitance, C out . This capacitance
10
0
10 20 30 40 50 60 70
80
consists of the power supply output caps, the load’s
decoupling caps, and in the case of Figure 11A, the supply’s
input filter caps. This surge current is illustrated in Figure
12, and can cause SCR failure or degradation by any one
of three mechanisms: di/dt, absolute peak surge, or I 2 t. The
RG, GATE CURRENT LIMITING RESISTOR ( W )
Figure 10. Minimum R G versus Supply Voltage
interrelationship of these failure methods and the breadth
of the applications make specification of the SCR by the
1.0
1
2 3 5 7 1
semiconductor manufacturer difficult and expensive.
Therefore, the designer must empirically determine the
SCR and circuit elements which result in reliable and
effective OVP operation. However, an understanding of the
factors which influence the SCR’s di/dt and surge
capabilities simplifies this task.
0.1
0.01
di/dt
As the gate region of the SCR is driven on, its area of
conduction takes a finite amount of time to grow, starting
0.001
0.0001
1
5
2
1
as a very small region and gradually spreading. Since the
0.001
0.01
0.1
1.0
10
anode current flows through this turned?on gate region,
very high current densities can occur in the gate region if
high anode currents appear quickly (di/dt). This can result
in immediate destruction of the SCR or gradual
degradation of its forward blocking voltage capabilities ?
depending on the severity of the occasion.
http://onsemi.com
5
t d , DELAY TIME (ms)
Figure 11. Capacitance versus
Minimum Overvoltage Duration
相关PDF资料 |
PDF描述 |
|---|---|
| R11-2-30.0A-34972-1 | CIRCUIT BREAKER ROCKER SP 30A 32 |
| R11-2-25.0A-34972-2 | CIRCUIT BREAKER ROCKER SP 25A 32 |
| 3404.2420.22 | FUSE&HOLDER 2.5A 125V FAST SMD |
| EL8171ISZ-T7 | IC AMP INST SGL R-R MCRPWR 8SOIC |
| R11-2-20.0A-34972-3 | CIRCUIT BREAKER ROCKER SP 20A 32 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MC3423DG | 制造商:ON Semiconductor 功能描述:Power Supply IC |
| MC3423DR2 | 功能描述:监控电路 6.5V OverVoltage RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MC3423DR2G | 功能描述:监控电路 6.5V OverVoltage Crowbar Sensing RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MC3423P | 制造商:Motorola Inc 功能描述: |
| MC3423P1 | 功能描述:监控电路 6.5V OverVoltage RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
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