参数资料
| 型号： | MC74HC03ADTR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | IC GATE NAND QUAD 2INP 14-TSSOP |
| 产品变化通告： | Product Obsolescence 24/Jan/2011 |
| 标准包装： | 2,500 |
| 系列： | 74HC |
| 逻辑类型： | 与非门 |
| 电路数： | 4 |
| 输入数： | 2 |
| 特点： | 开路漏极 |
| 电源电压： | 2 V ~ 6 V |
| 电流 - 静态（最大值）： | 1µA |
| 输出电流高，低： | -，5.2mA |
| 逻辑电平 - 低： | 0.5 V ~ 1.8 V |
| 逻辑电平 - 高： | 1.5 V ~ 4.2 V |
| 额定电压和最大 CL 时的最大传播延迟： | 20ns @ 6V，50pF |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 供应商设备封装： | 14-TSSOP |
| 封装/外壳： | 14-TSSOP（0.173"，4.40mm 宽） |
| 包装： | 带卷 (TR) |
MC74HC03A
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air
SOIC Package
TSSOP Package
500
450
mW
Tstg
Storage Temperature
–65 to + 150
°C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
SOIC or TSSOP Package
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
Derating SOIC Package: – 7 mW/°C from 65° to 125°C
TSSOP Package: 6.1 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, Vout
DC Input Voltage, Output Voltage (Referenced to GND)
0
VCC
V
TA
Operating Temperature, All Package Types
–55
+125
°C
tr, tf
Input Rise and Fall Time
VCC = 2.0 V
(Figure 1)
VCC = 4.5 V
VCC = 6.0 V
0
1000
500
400
ns
DESIGN GUIDE
Criteria
Value
Unit
Internal Gate Count*
7.0
ea
Internal Gate Propagation Delay
1.5
ns
Internal Gate Power Dissipation
5.0
mW
Speed Power Product
0.0075
pJ
*Equivalent to a twoinput NAND gate
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
相关PDF资料 |
PDF描述 |
|---|---|
| MC74HC04AFG | IC INVERTER HEX LSTTL 14-SOEIAJ |
| MC74HC05ADTR2G | IC HEX INV OPEN DRAIN 14TSSOP |
| MC74HC08AFELG | IC GATE AND QUAD 2INPUT 14SOEIAJ |
| MC74HC10ADTR2G | IC GATE NAND TRIPLE 3INP 14TSSOP |
| MC74HC11ADR2G | IC AND GATE 3INPUT 14 SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MC74HC03ADTR2G | 功能描述:逻辑门 2-6V Quad 2-Input NAND w/Open Drain RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| MC74HC03ADTR2G-CUT TAPE | 制造商:ON 功能描述:MC74HC03A Series 2 to 6 V Quad 2-Input NAND Gate w/Open Drain Outputs - TSSOP-14 |
| MC74HC03AFEL | 功能描述:逻辑门 2-6V Quad 2-Input RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| MC74HC03AFELG | 功能描述:逻辑门 2-6V Quad 2-Input NAND w/Open Drain RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| MC74HC03AFL1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
发布紧急采购，3分钟左右您将得到回复。