参数资料
型号: MC74HC1G04DFT1
厂商: ON Semiconductor
文件页数: 2/6页
文件大小: 0K
描述: IC INVERTER SGL HS CMOS SOT353
产品变化通告: Wire Change for SC88/A 17/Jun/2011
标准包装: 1
系列: 74HC
逻辑类型: 逆变器,缓冲器
电路数: 1
输入数: 1
电源电压: 2 V ~ 6 V
电流 - 静态(最大值): 1µA
输出电流高,低: 2.6mA,2.6mA
逻辑电平 - 低: 0.5 V ~ 1.8 V
逻辑电平 - 高: 1.5 V ~ 4.2 V
额定电压和最大 CL 时的最大传播延迟: 17ns @ 6V,50pF
工作温度: -55°C ~ 125°C
安装类型: 表面贴装
供应商设备封装: SC-70
封装/外壳: 6-TSSOP(5 引线),SC-88A,SOT-353
包装: 剪切带 (CT)
其它名称: MC74HC1G04DFTOSCT
MC74HC1G04
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage
*0.5 to )7.0
V
VIN
DC Input Voltage
*0.5 to VCC )0.5
V
VOUT
DC Output Voltage
*0.5 to VCC )0.5
V
IIK
DC Input Diode Current
$20
mA
IOK
DC Output Diode Current
$20
mA
IOUT
DC Output Sink Current
$12.5
mA
ICC
DC Supply Current per Supply Pin
$25
mA
TSTG
Storage Temperature Range
*65 to )150
_C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
260
_C
TJ
Junction Temperature Under Bias
)150
_C
qJA
Thermal Resistance
SC705/SC88A (Note 1)
TSOP5
350
230
_C/W
PD
Power Dissipation in Still Air at 85_CSC705/SC88A
TSOP5
150
200
mW
MSL
Moisture Sensitivity
Level 1
FR
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V0 @ 0.125 in
VESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
u2000
u200
N/A
V
ILATCHUP
Latchup Performance
Above VCC and Below GND at 125_C (Note 5)
$500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2 ounce copper trace with no air flow.
2. Tested to EIA/JESD22A114A.
3. Tested to EIA/JESD22A115A.
4. Tested to JESD22C101A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage
2.0
6.0
V
VIN
DC Input Voltage
0.0
VCC
V
VOUT
DC Output Voltage
0.0
VCC
V
TA
Operating Temperature Range
*55
)125
_C
tr , tf
Input Rise and Fall Time
VCC = 2.0 V
VCC = 3.0 V
VCC = 4.5 V
VCC = 6.0 V
0
1000
600
500
400
ns
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
10
100
1000
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
NORMALIZED
F
AILURE
RA
TE
TIME, YEARS
T
J=
1
30
_C
T
J=
1
20
_C
T
J=
1
10
_C
T
J=
1
00
_C
T
J=
9
0_
C
T
J=
8
0_
C
相关PDF资料
PDF描述
MC74HC1G08DFT1 IC GATE AND SGL 2INPUT SOT-353
MC74HC1G14DFT2 IC INVERTER SGL SCHMITT SOT-353
MC74HC1G32DFT1 IC GATE OR SGL 2INPUT SOT-353
MC74HC1GU04DFT2 IC INVERTER UNBUFF SGL SOT-353
MC74HC20ADTR2G IC GATE NAND DUAL 4INP 14-TSSOP
相关代理商/技术参数
参数描述
MC74HC1G04DFT1G 功能描述:变换器 2-6V Single CMOS RoHS:否 制造商:NXP Semiconductors 电路数量:6 逻辑系列:74ABT 逻辑类型:BiCMOS 高电平输出电流:- 15 mA 低电平输出电流:20 mA 传播延迟时间:2.2 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 工作温度范围: 封装 / 箱体:DIP-14 封装:Tube
MC74HC1G04DFT2 功能描述:变换器 2-6V Single CMOS RoHS:否 制造商:NXP Semiconductors 电路数量:6 逻辑系列:74ABT 逻辑类型:BiCMOS 高电平输出电流:- 15 mA 低电平输出电流:20 mA 传播延迟时间:2.2 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 工作温度范围: 封装 / 箱体:DIP-14 封装:Tube
MC74HC1G04DFT2G 功能描述:变换器 2-6V Single CMOS RoHS:否 制造商:NXP Semiconductors 电路数量:6 逻辑系列:74ABT 逻辑类型:BiCMOS 高电平输出电流:- 15 mA 低电平输出电流:20 mA 传播延迟时间:2.2 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 工作温度范围: 封装 / 箱体:DIP-14 封装:Tube
MC74HC1G04DTT1 功能描述:变换器 2-6V Single CMOS RoHS:否 制造商:NXP Semiconductors 电路数量:6 逻辑系列:74ABT 逻辑类型:BiCMOS 高电平输出电流:- 15 mA 低电平输出电流:20 mA 传播延迟时间:2.2 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 工作温度范围: 封装 / 箱体:DIP-14 封装:Tube
MC74HC1G04DTT1G 功能描述:变换器 2-6V Single CMOS RoHS:否 制造商:NXP Semiconductors 电路数量:6 逻辑系列:74ABT 逻辑类型:BiCMOS 高电平输出电流:- 15 mA 低电平输出电流:20 mA 传播延迟时间:2.2 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 工作温度范围: 封装 / 箱体:DIP-14 封装:Tube