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参数资料
| 型号： | MC74HCT04AFELG |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | IC INVERTER HEX LSTTL IN 14SOEIA |
| 产品变化通告： | Product Discontinuation 30/Sept/2011 |
| 标准包装： | 2,000 |
| 系列： | 74HCT |
| 逻辑类型： | 逆变器，缓冲器 |
| 电路数： | 6 |
| 输入数： | 1 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 电流 - 静态（最大值）： | 1µA |
| 输出电流高，低： | 4mA，4mA |
| 逻辑电平 - 低： | 0.8V |
| 逻辑电平 - 高： | 2V |
| 额定电压和最大 CL 时的最大传播延迟： | 17ns @ 5V，50pF |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 供应商设备封装： | SOEIAJ-14 |
| 封装/外壳： | 14-SOIC（0.209"，5.30mm 宽） |
| 包装： | 带卷 (TR) |
MC74HCT04A
http://onsemi.com
3
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air
Plastic DIP
SOIC Package
TSSOP Package
750
500
450
mW
Tstg
Storage Temperature Range
– 65 to + 150
_C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP, SOIC or TSSOP Package
260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage (Referenced to GND)
4.5
5.5
V
Vin, Vout
DC Input Voltage, Output Voltage (Referenced to GND)
0
VCC
V
TA
Operating Temperature Range, All Package Types
– 55
+ 125
_C
tr, tf
Input Rise/Fall Time (Figure 1)
0
500
ns
DC CHARACTERISTICS (Voltages Referenced to GND)
VCC
V
Guaranteed Limit
Symbol
Parameter
Condition
55 to 25°C
≤85°C
≤125°C
Unit
VIH
Minimum HighLevel Input Voltage
Vout = 0.1V
|Iout| ≤ 20mA
4.5
5.5
2.0
V
VIL
Maximum LowLevel Input Voltage
Vout = VCC 0.1V
|Iout| ≤ 20mA
4.5
5.5
0.8
V
VOH
Minimum HighLevel Output
Voltage
Vin = VIL
|Iout| ≤ 20mA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
Vin = VIL
|Iout| ≤ 4.0mA
4.5
3.98
3.84
3.70
VOL
Maximum LowLevel Output
Voltage
Vin = VIH
|Iout| ≤ 20mA
4.5
5.5
0.1
V
Vin = VIH
|Iout| ≤ 4.0mA
4.5
0.26
0.33
0.40
Iin
Maximum Input Leakage Current
Vin = VCC or GND
5.5
±0.1
±1.0
mA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0mA
5.5
1
10
40
mA
DICC
Additional Quiescent Supply
Current
Vin = 2.4V, Any One Input
Vin = VCC or GND, Other Inputs
Iout = 0mA
5.5
≥ 55°C
25 to 125°C
mA
2.9
2.4
1. Total Supply Current = ICC + ΣDICC.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
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