参数资料
| 型号： | MC74HCT366ADG |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | IC BUFFER INV HEX 3ST 16-SOIC |
| 标准包装： | 48 |
| 系列： | 74HCT |
| 逻辑类型： | 逆变器，缓冲器 |
| 电路数： | 6 |
| 输入数： | 1 |
| 特点： | 三态 |
| 电源电压： | 2 V ~ 6 V |
| 电流 - 静态（最大值）： | 4µA |
| 输出电流高，低： | 7.8mA，7.8mA |
| 逻辑电平 - 低： | 0.8V |
| 逻辑电平 - 高： | 2V |
| 额定电压和最大 CL 时的最大传播延迟： | 20ns @ 6V，50pF |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 供应商设备封装： | 16-SOIC |
| 封装/外壳： | 16-SOIC（0.154"，3.90mm 宽） |
| 包装： | 管件 |
MC74HCT366A
http://onsemi.com
3
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air,
SOIC Package
TSSOP Package
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
these limits are exceeded, device functionality should not be assumed, damage may occur and
reliability may be affected.
Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, Vout
DC Input Voltage, Output Voltage (Referenced to GND)
0
VCC
V
TA
Operating Temperature, All Package Types
– 55
+ 125
_C
tr, tf
Input Rise and Fall Time
VCC = 2.0 V
(Figure 1)
VCC = 3.0 V
VCC = 4.5 V
VCC = 6.0 V
0
1000
600
500
400
ns
Functional operation above the stresses listed in the Recommended Operating Ranges is not
implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may
affect device reliability.
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Test Conditions
VCC
V
Guaranteed Limit
Unit
– 55 to
25_C
v 85_C
v 125_C
VIH
Minimum HighLevel Input
Voltage
Vout = VCC – 0.1 V
|Iout| v 20 μA
4.5
to
5.5
2.0
V
VIL
Maximum LowLevel Input
Voltage
Vout = 0.1 V
|Iout| v 20 μA
4.5
to
5.5
0.80
V
VOH
Minimum HighLevel Output
Voltage
Vin = VIH
|Iout| v 20 μA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH
|Iout| v 3.6 mA
|Iout| v 6.0 mA
|Iout| v 7.8 mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.20
3.70
5.20
VOL
Maximum LowLevel Output
Voltage
Vin = VIL
|Iout| v 20 μA
2.0
4.5
6.0
0.1
V
Vin = VIL
|Iout| v 3.6 mA
|Iout| v 6.0 mA
|Iout| v 7.8 mA
3.0
4.5
6.0
0.26
0.33
0.40
Iin
Maximum Input Leakage Current Vin = VCC or GND
6.0
± 0.1
± 1.0
μA
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
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