参数资料
型号: MC74HCT86ADTR2G
厂商: ON Semiconductor
文件页数: 2/8页
文件大小: 0K
描述: IC GATE EXCL-OR QUAD 2IN 14TSSOP
标准包装: 2,500
系列: 74HCT
逻辑类型: XOR(异或)
电路数: 4
输入数: 2
电源电压: 2 V ~ 6 V
电流 - 静态(最大值): 1µA
输出电流高,低: 4mA,4mA
逻辑电平 - 低: 0.8V
逻辑电平 - 高: 2V
额定电压和最大 CL 时的最大传播延迟: 20ns @ 5V,50pF
工作温度: -55°C ~ 125°C
安装类型: 表面贴装
供应商设备封装: 14-TSSOP
封装/外壳: 14-TSSOP(0.173",4.40mm 宽)
包装: 带卷 (TR)
MC74HCT86A
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air,
Plastic DIP
SOIC Package
TSSOP Package
750
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC or TSSOP Package)
260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, Vout DC Input Voltage, Output Voltage (Referenced to
GND)
0
VCC
V
TA
Operating Temperature, All Package Types
– 55
+ 125
_C
tr, tf
Input Rise and Fall Time
VCC = 2.0 V
(Figure 1)
VCC = 4.5 V
VCC = 6.0 V
0
1000
500
400
ns
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
相关PDF资料
PDF描述
MC74HCU04AN IC INVERTER HEX UNBUFF 14-DIP
MC74LCX00MELG IC GATE NAND QUAD 2INP 14-SOEIAJ
MC74LCX02MELG IC GATE NOR QUAD 2INP 14-SOEIAJ
MC74LCX04MELG IC INVERTER HEX LV CMOS 14SOEIAJ
MC74LCX08MELG IC GATE AND QUAD 2INPUT 14SOEIAJ
相关代理商/技术参数
参数描述
MC74HCU04 制造商:Motorola 功能描述:74HCU04
MC74HCU04AD 功能描述:变换器 2-6V CMOS Hex RoHS:否 制造商:NXP Semiconductors 电路数量:6 逻辑系列:74ABT 逻辑类型:BiCMOS 高电平输出电流:- 15 mA 低电平输出电流:20 mA 传播延迟时间:2.2 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 工作温度范围: 封装 / 箱体:DIP-14 封装:Tube
MC74HCU04ADG 功能描述:变换器 LOG CMOS INVERTER HEX RoHS:否 制造商:NXP Semiconductors 电路数量:6 逻辑系列:74ABT 逻辑类型:BiCMOS 高电平输出电流:- 15 mA 低电平输出电流:20 mA 传播延迟时间:2.2 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 工作温度范围: 封装 / 箱体:DIP-14 封装:Tube
MC74HCU04ADR2 功能描述:变换器 2-6V CMOS Hex RoHS:否 制造商:NXP Semiconductors 电路数量:6 逻辑系列:74ABT 逻辑类型:BiCMOS 高电平输出电流:- 15 mA 低电平输出电流:20 mA 传播延迟时间:2.2 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 工作温度范围: 封装 / 箱体:DIP-14 封装:Tube
MC74HCU04ADR2G 功能描述:变换器 2-6V CMOS Hex Unbuffered RoHS:否 制造商:NXP Semiconductors 电路数量:6 逻辑系列:74ABT 逻辑类型:BiCMOS 高电平输出电流:- 15 mA 低电平输出电流:20 mA 传播延迟时间:2.2 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 工作温度范围: 封装 / 箱体:DIP-14 封装:Tube