参数资料
| 型号： | MC74HCU04AN |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | IC INVERTER HEX UNBUFF 14-DIP |
| 产品变化通告： | Product Discontinuation 20/Aug/2008 |
| 标准包装： | 25 |
| 系列： | 74HCU |
| 逻辑类型： | 反相器 |
| 电路数： | 6 |
| 输入数： | 1 |
| 电源电压： | 2 V ~ 6 V |
| 电流 - 静态（最大值）： | 1µA |
| 输出电流高，低： | 5.2mA，5.2mA |
| 逻辑电平 - 低： | 0.3 V ~ 1.1 V |
| 逻辑电平 - 高： | 1.7 V ~ 4.8 V |
| 额定电压和最大 CL 时的最大传播延迟： | 12ns @ 6V，50pF |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 通孔 |
| 供应商设备封装： | 14-PDIP |
| 封装/外壳： | 14-DIP（0.300"，7.62mm） |
| 包装： | 管件 |
MC74HCU04A
http://onsemi.com
3
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air
Plastic DIP
SOIC Package
TSSOP Package
750
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
TL
Lead Temperature, 1 mm from case for 10 Seconds
Plastic DIP, SOIC or TSSOP Package
260
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any
of these limits are exceeded, device functionality should not be assumed, damage may occur
and reliability may be affected.
Derating — Plastic DIP: –10mW/_C from 65_ to 125_C
SOIC Package: –7mW/_C from 65_ to 125_C
TSSOP Package: 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, Vout
DC Input Voltage, Output Voltage (Referenced to GND)
0
VCC
V
TA
Operating Temperature, All Package Types
– 55
+ 125
_C
tr, tf
Input Rise and Fall Time (Figure 1)
No
Limit
ns
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Test Conditions
Guaranteed Limit
Unit
VCC
V
–55 to
25_C
v 85_C
v 125_C
VIH
Minimum HighLevel Input
Voltage
2.0
3.0
4.5
6.0
1.7
2.5
3.6
4.8
1.7
2.5
3.6
4.8
l.7
2.5
3.6
4.8
V
VIL
Maximum LowLevel Input
Voltage
2.0
3.0
4.5
6.0
0.3
0.5
0.8
1.1
0.3
0.5
0.8
1.1
0.3
0.5
0.8
1.1
V
VOH
Minimum HighLevel Output
Voltage
Vin = GND
|Iout| v 20 mA
2.0
4.5
6.0
1.8
4.0
5.5
1.8
4.0
5.5
1.8
4.0
5.5
V
Vin = GND
|Iout| v 2.4 mA
|Iout| v 4.0 mA
|Iout| v 5.2 mA
3.0
4.5
6.0
2.36
3.86
5.36
2.26
3.76
5.26
2.20
3.70
5.20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
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