参数资料
| 型号： | MC74LVX14DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | IC INVERTER HEX SCHMITT 14-SOIC |
| 标准包装： | 2,500 |
| 系列： | 74LVX |
| 逻辑类型： | 逆变器，缓冲器 |
| 电路数： | 6 |
| 输入数： | 1 |
| 特点： | 施密特触发器 |
| 电源电压： | 2 V ~ 3.6 V |
| 电流 - 静态（最大值）： | 2µA |
| 输出电流高，低： | 4mA，4mA |
| 逻辑电平 - 低： | 0.9V |
| 逻辑电平 - 高： | 2.2V |
| 额定电压和最大 CL 时的最大传播延迟： | 14.1ns @ 3V ~ 3.6V，50pF |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 供应商设备封装： | 14-SOICN |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
| 其它名称： | MC74LVX14DR2G-ND MC74LVX14DR2GOSTR |
MC74LVX14
http://onsemi.com
3
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage
–0.5 to +7.0
V
Vin
DC Input Voltage
–0.5 to +7.0
V
Vout
DC Output Voltage
–0.5 to VCC +0.5
V
IIK
Input Diode Current
20
mA
IOK
Output Diode Current
±20
mA
Iout
DC Output Current, per Pin
±25
mA
ICC
DC Supply Current, VCC and GND Pins
±50
mA
PD
Power Dissipation
180
mW
Tstg
Storage Temperature
–65 to +150
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage
2.0
3.6
V
Vin
DC Input Voltage
0
5.5
V
Vout
DC Output Voltage
0
VCC
V
TA
Operating Temperature, All Package Types
40
+85
°C
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
V
TA = 25°C
TA = 40 to 85°C
Unit
Min
Typ
Max
Min
Max
Positive Threshold Voltage (Figure 5)
3.0
2.20
2.20
V
VT
Negative Threshold Voltage (Figure 5)
3.0
0.90
0.90
V
VH
Hysteresis Voltage (Figure 5)
3.0
0.30
1.20
0.30
1.20
V
VOH
HighLevel Output Voltage
(Vin = VIH or VIL)
IOH = 50 mA
IOH = 4 mA
2.0
3.0
1.9
2.9
2.58
2.0
3.0
1.9
2.9
2.48
V
VOL
LowLevel Output Voltage
(Vin = VIH or VIL)
IOL = 50 mA
IOL = 4 mA
2.0
3.0
0.0
0.0
0.1
0.36
0.1
0.44
V
Iin
Input Leakage Current
Vin = 5.5 V or GND
3.6
±0.1
±1.0
mA
ICC
Quiescent Supply Current
Vin = VCC or GND
3.6
2.0
20.0
mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Symbol
Parameter
Test Conditions
TA = 25°C
TA = 40 to 85°C
Unit
Min
Typ
Max
Min
Max
tPLH,
tPHL
Propagation Delay, InputtoOutput
VCC = 2.7 V
CL = 15 pF
CL = 50 pF
8.7
11.2
16.3
19.8
1.0
19.5
23.0
ns
VCC = 3.3 ± 0.3 V CL = 15 pF
CL = 50 pF
6.8
9.3
10.6
14.1
1.0
1.0
12.5
16.0
tOSHL
tOSLH
OutputtoOutput Skew (Note 1)
VCC = 2.7 V
CL = 50 pF
VCC = 3.3 ± 0.3 V CL = 50 pF
1.5
1.5
ns
1. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.
The specification applies to any outputs switching in the same direction, either HIGHtoLOW (tOSHL) or LOWtoHIGH (tOSLH); parameter
guaranteed by design.
CAPACITIVE CHARACTERISTICS
Symbol
Parameter
TA = 25°C
TA = 40 to 85°C
Unit
Min
Typ
Max
Min
Max
Cin
Input Capacitance
4
10
10
pF
CPD
Power Dissipation Capacitance (Note 2)
21
pF
2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC/6 (per buffer). CPD is used to determine the
noload dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
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