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参数资料
| 型号： | MC74VHC1G01DFR2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 门电路 |
| 英文描述： | AHC/VHC SERIES, 2-INPUT NAND GATE, PDSO5 |
| 封装： | SC-70, SC-88A, SOT-353, 5 PIN |
| 文件页数： | 6/12页 |
| 文件大小： | 229K |
| 代理商： | MC74VHC1G01DFR2 |
MC74VHC1G01
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
VCC
TA = 25°C
TA ≤ 85°C
TA ≤ 125°C
Symbol
Parameter
Test Conditions
(V)
Min
Typ
Max
Min
Max
Min
Max
Unit
VIH
Minimum High–Level
Input Voltage
2.0
3.0
4.5
5.5
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
V
VIL
Maximum Low–Level
Input Voltage
2.0
3.0
4.5
5.5
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
V
VOH
Minimum High–Level
Output Voltage
VIN = VIH or VIL
IOH = –50A
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
VIN = VIH or VIL
IOH = –4mA
IOH = –8mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
VOL
Maximum Low–Level
Output Voltage
VIN = VIH or VIL
IOL = 50A
2.0
3.0
4.5
0.0
0.1
V
VIN = VIH or VIL
IOL = 4mA
IOL = 8mA
3.0
4.5
0.36
0.44
0.52
V
IIN
Maximum Input
Leakage Current
VIN = 5.5V or GND
0 to
5.5
±0.1
±1.0
A
ICC
Maximum Quiescent
Supply Current
VIN = VCC or GND
5.5
2.0
20
40
A
IOPD
Maximum
Off–state
Leakage Current
VOUT = 5.5V
0
0.25
2.5
5.0
A
AC ELECTRICAL CHARACTERISTICS (Cload = 50 pF, Input tr = tf = 3.0ns)
TA = 25°C
TA ≤ 85°C
TA ≤ 125°C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Min
Max
Min
Max
Unit
tPZL
Maximum Output
Enable Time,
Input A or B to Y
VCC = 3.0 ± 0.3V
CL = 15 pF
RL = 1KW
CL = 50 pF
5.5
8.0
7.9
11.4
9.5
13.0
11.0
15.5
ns
Input A or B to Y
VCC = 5.0 ± 0.5V
CL = 15 pF
RL = 1KW
CL = 50 pF
3.7
5.2
5.5
7.5
6.5
8.5
8.0
10.0
tPLZ
Maximum Output
Di
bl Ti
VCC = 3.0 ± 0.3V, RL = 1KW, CL = 50 pF
8.0
11.4
13.0
15.5
ns
Disable Time
VCC = 5.0 ± 0.5V, RL = 1KW, CL = 50 pF
5.2
7.5
8.5
10.0
CIN
Maximum Input
Capacitance
4
10
10
10
pF
Typical @ 25
°C, VCC = 5.0V
CPD
Power Dissipation Capacitance (Note 1.)
18
pF
1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no–load dynamic
power consumption; PD = CPD VCC2 fin + ICC VCC.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MC74VHC1G01DFT1 | 功能描述:逻辑门 2-5.5V Single NAND RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| MC74VHC1G01DFT1G | 功能描述:逻辑门 2-5.5V Single NAND 2-Input w/Open Drain RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| MC74VHC1G01DFT2 | 功能描述:逻辑门 2-5.5V Single NAND RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| MC74VHC1G01DFT2G | 功能描述:逻辑门 2-5.5V Single NAND 2-Input w/Open Drain RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| MC74VHC1G01DTT1 | 功能描述:逻辑门 2-5.5V Single NAND RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
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