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参数资料
| 型号： | MC74VHC1G126DFT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | IC BUFFER TRI-ST NON-INV SOT353 |
| 产品变化通告： | Wire Change for SC88/A 17/Jun/2011 |
| 标准包装： | 1 |
| 系列： | 74VHC |
| 逻辑类型： | 缓冲器/线路驱动器，非反相 |
| 元件数： | 1 |
| 每个元件的位元数： | 1 |
| 输出电流高，低： | 8mA，8mA |
| 电源电压： | 2 V ~ 5.5 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP（5 引线），SC-88A，SOT-353 |
| 供应商设备封装： | SC-70 |
| 包装： | 剪切带 (CT) |
| 其它名称： | MC74VHC1G126DOSCT Q4009579D |
MC74VHC1G126
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Characteristics
Value
Unit
VCC
DC Supply Voltage
0.5 to +7.0
V
VIN
DC Input Voltage
0.5 to +7.0
V
VOUT
DC Output Voltage
VCC = 0
High or Low State
0.5 to 7.0
0.5 to VCC + 0.5
V
IIK
Input Diode Current
20
mA
IOK
Output Diode Current
VOUT < GND; VOUT > VCC
+20
mA
IOUT
DC Output Current, per Pin
+25
mA
ICC
DC Supply Current, VCC and GND
+50
mA
PD
Power dissipation in still air
SC88A, TSOP5
200
mW
qJA
Thermal resistance
SC88A, TSOP5
333
°C/W
TL
Lead temperature, 1 mm from case for 10 secs
260
°C
TJ
Junction temperature under bias
+150
°C
Tstg
Storage temperature
65 to +150
°C
VESD
ESD Withstand Voltage
Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
> 2000
> 200
N/A
V
ILatchup
Latchup Performance
±500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22A114A
2. Tested to EIA/JESD22A115A
3. Tested to JESD22C101A
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
VCC
DC Supply Voltage
2.0
5.5
V
VIN
DC Input Voltage
0.0
5.5
V
VOUT
DC Output Voltage
0.0
VCC
V
TA
Operating Temperature Range
55
+125
°C
tr , tf
Input Rise and Fall Time
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
0
100
20
ns/V
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature °C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
10
100
1000
TIME, YEARS
NORMALIZED
F
AILURE
RA
TE
T J
=
80
C°
T J
=
90
C°
T J
=
100
C°
T J
=
1
10
C°
T J
=
130
C°
T J
=
120
C°
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MC74VHC1G126DFT2 | 功能描述:缓冲器和线路驱动器 2-5.5V Single 3 St. RoHS:否 制造商:Micrel 输入线路数量:1 输出线路数量:2 极性:Non-Inverting 电源电压-最大:+/- 5.5 V 电源电压-最小:+/- 2.37 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Reel |
| MC74VHC1G126DT1G | 功能描述:缓冲器和线路驱动器 2-5.5V Single 3 St. Non-Inverting RoHS:否 制造商:Micrel 输入线路数量:1 输出线路数量:2 极性:Non-Inverting 电源电压-最大:+/- 5.5 V 电源电压-最小:+/- 2.37 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Reel |
| MC74VHC1G126DTT1 | 功能描述:缓冲器和线路驱动器 2-5.5V Single 3 St. RoHS:否 制造商:Micrel 输入线路数量:1 输出线路数量:2 极性:Non-Inverting 电源电压-最大:+/- 5.5 V 电源电压-最小:+/- 2.37 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Reel |
| MC74VHC1G132DF1G | 功能描述:逻辑门 2-5.5V Single NAND 2-Input Schmitt RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| MC74VHC1G132DF2G | 功能描述:逻辑门 2-5.5V Single NAND 2-Input Schmitt RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
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