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参数资料
| 型号： | MC74VHC1G132DTR2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 门电路 |
| 英文描述： | AHC/VHC SERIES, 2-INPUT NAND GATE, PDSO5 |
| 封装： | SC-59, SOT-23, TSOP-5 |
| 文件页数： | 5/12页 |
| 文件大小： | 217K |
| 代理商： | MC74VHC1G132DTR2 |
MC74VHC1G132
http://onsemi.com
2
MAXIMUM RATINGS*
Characteristics
Symbol
Value
Unit
DC Supply Voltage
VCC
–0.5 to +7.0
V
DC Input Voltage
VIN
–0.5 to +7.0
V
DC Output Voltage
VCC = 0
High or Low State
VOUT
–0.5 to 7.0
–0.5 to VCC + 0.5
V
Input Diode Current
IIK
–20
mA
Output Diode Current
(VOUT < GND; VOUT > VCC)
IOK
+20
mA
DC Output Current, per Pin
IOUT
+25
mA
DC Supply Current, VCC and GND
ICC
+50
mA
Power dissipation in still air, SC–88A
PD
200
mW
Lead temperature, 1 mm from case for 10 s
TL
260
°C
Storage temperature
Tstg
–65 to +150
°C
* Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those
indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional
operation should be restricted to the Recommended Operating Conditions.
Derating — SC–88A Package: –3 mW/
_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Characteristics
Symbol
Min
Max
Unit
DC Supply Voltage
VCC
4.5
5.5
V
DC Input Voltage
VIN
0.0
5.5
V
DC Output Voltage
VOUT
0.0
VCC
V
Operating Temperature Range
TA
–55
+125
°C
The
qJA of the package is equal to 1/Derating. Higher junction temperatures may affect the expected lifetime of the device per the table and
figure below.
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature
°C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
10
100
1000
TIME, YEARS
NORMALIZED
F
AILURE
RA
TE
T J
=
80
C°
T J
=
90
C°
T J
=
100
C°
T J
=
1
10
C°
T J
=
130
C°
T J
=
120
C°
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 2. Failure Rate vs. Time
Junction Temperature
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MC74VHC1G132DTT1 | 功能描述:逻辑门 2-5.5V Single NAND RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| MC74VHC1G135DF1G | 功能描述:逻辑门 2-5.5V Single NAND 2-Input Schmitt RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| MC74VHC1G135DF2G | 功能描述:逻辑门 2-5.5V Single NAND 2-Input Schmitt RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| MC74VHC1G135DFT1 | 功能描述:逻辑门 2-5.5V Single NAND RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
| MC74VHC1G135DFT2 | 功能描述:逻辑门 2-5.5V Single NAND RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
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