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参数资料
| 型号： | MC74VHC1G50DTT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 门电路 |
| 英文描述： | AHC/VHC SERIES, 1-INPUT NON-INVERT GATE, PDSO5 |
| 封装： | SC-59, SOT-23, TSOP-5 |
| 文件页数： | 8/12页 |
| 文件大小： | 118K |
| 代理商： | MC74VHC1G50DTT3 |
MC74VHC1G50
http://onsemi.com
5
Figure 6. Carrier Tape Specifications
D1
FOR COMPONENTS
10 PITCHES
CUMULATIVE
TOLERANCE ON
TAPE
±0.2 mm
(
±0.008”)
2.0 mm
× 1.2 mm
AND LARGER
CENTER LINES
OF CAVITY
EMBOSSMENT
USER DIRECTION OF FEED
K0
SEE
NOTE 8.
P0
P2
D
E
F
W
B0
+
K
t
B1
TOP
COVER
TAPE
P
SEE NOTE 8.
A0
FOR MACHINE REFERENCE
ONLY
INCLUDING DRAFT AND RADII
CONCENTRIC AROUND B0
R MIN.
TAPE AND COMPONENTS
SHALL PASS AROUND RADIUS “R”
WITHOUT DAMAGE
BENDING RADIUS
*TOP COVER
TAPE THICKNESS (t1)
0.10 mm
(0.004”) MAX.
EMBOSSED
CARRIER
EMBOSSMENT
TYPICAL
COMPONENT CAVITY
CENTER LINE
TYPICAL
COMPONENT
CENTER LINE
MAXIMUM COMPONENT ROTATION
10
°
CAMBER (TOP VIEW)
ALLOWABLE CAMBER TO BE 1 mm/100 mm NONACCUMULATIVE OVER 250 mm
100 mm
(3.937”)
1 mm
(0.039”) MAX
250 mm
(9.843”)
1 mm MAX
TAPE
EMBOSSED CARRIER DIMENSIONS (See Notes 7. and 8.)
Tape
Size
B1
Max
D
D1
E
F
K
P
P0
P2
R
T
W
8 mm
4.35 mm
(0.171”)
1.5 +0.1/
–0.0 mm
(0.059
+0.004/
–0.0”)
1.0 mm
Min
(0.039”)
1.75
±0.1 mm
(0.069
±0.004”)
3.5
±0.5 mm
(1.38
±0.002”)
2.4 mm
(0.094”)
4.0
±0.10 mm
(0.157
±0.004”)
4.0
±0.1 mm
(0.156
±0.004”)
2.0
±0.1 mm
(0.079
±0.002”)
25 mm
(0.98”)
0.3
±0.05 mm
(0.01
+0.0038/
–0.0002”)
8.0
±0.3 mm
(0.315
±0.012”)
7. Metric Dimensions Govern–English are in parentheses for reference only.
8. A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min to
0.50 mm max. The component cannot rotate more than 10
° within the determined cavity
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| MC74VHC1G66DFT2 | 功能描述:模拟开关 IC 2-5.5V Hi Speed ANLG RoHS:否 制造商:Texas Instruments 开关数量:2 开关配置:SPDT 开启电阻（最大值）:0.1 Ohms 切换电压（最大）: 开启时间（最大值）: 关闭时间（最大值）: 工作电源电压:2.7 V to 4.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:DSBGA-16 |
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