参数资料
| 型号： | MC74VHCT573ADWRG |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | IC LATCH OCTAL D 3ST 20-SOICW |
| 标准包装： | 1,000 |
| 系列： | 74VHCT |
| 逻辑类型： | D 型透明锁存器 |
| 电路： | 8:8 |
| 输出类型： | 三态 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 独立电路： | 1 |
| 延迟时间 - 传输： | 5.1ns |
| 输出电流高，低： | 8mA，8mA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 20-SOIC |
| 包装： | 带卷 (TR) |
MC74VHCT573A
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
VCC
V
TA = 25°C
TA = 40 to 85°C
Unit
Min
Typ
Max
Min
Max
VIH
Minimum HighLevel Input Voltage
4.5 to 5.5
2.0
2.0
V
VIL
Maximum LowLevel Input Voltage
4.5 to 5.5
0.8
0.8
V
VOH
Minimum HighLevel Output
Voltage
Vin = VIH or VIL
IOH = 50mA
4.5
4.4
4.5
4.4
V
IOH = 8mA
4.5
3.94
3.80
VOL
Maximum LowLevel Output
Voltage
Vin = VIH or VIL
IOL = 50mA
4.5
0.0
0.1
0.1
V
IOL = 8mA
4.5
0.36
0.44
Iin
Maximum Input Leakage Current
Vin = 5.5 V or GND
0 to 5.5
± 0.1
± 1.0
mA
IOZ
Maximum 3State Leakage Current
Vin = VIL or VIH
Vout = VCC or GND
5.5
± 0.25
± 2.5
mA
ICC
Maximum Quiescent Supply Current
Vin = VCC or GND
5.5
4.0
40.0
mA
ICCT
Quiescent Supply Current
Per Input: VIN = 3.4V
Other Input: VCC or GND
5.5
1.35
1.50
mA
IOPD
Output Leakage Current
VOUT = 5.5V
0
0.5
5.0
mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
Symbol
Parameter
Test Conditions
TA = 25°C
TA = 40 to 85°C
Unit
Min
Typ
Max
Min
Max
tPLH,
tPHL
Maximum Propagation Delay,
LE to Q
VCC = 5.0 ± 0.5V
CL = 15pF
CL = 50pF
7.7
8.5
12.3
13.3
1.0
13.5
14.5
ns
tPLH,
tPHL
Maximum Propagation Delay,
D to Q
VCC = 5.0 ± 0.5V
CL = 15pF
CL = 50pF
5.1
5.9
8.5
9.5
1.0
1.0
9.5
10.5
ns
tPZL,
tPZH
Output Enable Time,
OE to Q
VCC = 5.0 ± 0.5V
CL = 15pF
RL = 1kW
CL = 50pF
6.3
7.1
10.9
11.9
1.0
12.5
13.5
ns
tPLZ,
tPHZ
Output Disable Time,
OE to Q
VCC = 5.0 ± 0.5V
CL = 50pF
RL = 1kW
8.8
11.2
1.0
12.0
ns
tOSLH,
tOSHL
Output to Output Skew
VCC = 5.5 ± 0.5V
CL = 50pF
(Note 1)
1.0
1.0
ns
Cin
Maximum Input Capacitance
4
10
10
pF
Cout
Maximum 3State Output Capacitance
(Output in HighImpedance State)
6
pF
CPD
Power Dissipation Capacitance (Note 2)
Typical @ 25°C, VCC = 5.0V
pF
25
1. Parameter guaranteed by design. tOSLH = |tPLHm tPLHn|, tOSHL = |tPHLm tPHLn|.
2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC/8 (per latch). CPD is used to determine the
noload dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50 pF, VCC = 5.0V)
Symbol
Parameter
TA = 25°C
Unit
Typ
Max
VOLP
Quiet Output Maximum Dynamic VOL
1.2
1.6
V
VOLV
Quiet Output Minimum Dynamic VOL
1.2
1.6
V
VIHD
Minimum High Level Dynamic Input Voltage
2.0
V
VILD
Maximum Low Level Dynamic Input Voltage
0.8
V
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| MC74VHCT574ADT | 功能描述:触发器 5V CMOS Octal RoHS:否 制造商:Texas Instruments 电路数量:2 逻辑系列:SN74 逻辑类型:D-Type Flip-Flop 极性:Inverting, Non-Inverting 输入类型:CMOS 输出类型: 传播延迟时间:4.4 ns 高电平输出电流:- 16 mA 低电平输出电流:16 mA 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:X2SON-8 封装:Reel |
| MC74VHCT574ADTG | 功能描述:触发器 5V CMOS Octal D-Type w/3-State Out RoHS:否 制造商:Texas Instruments 电路数量:2 逻辑系列:SN74 逻辑类型:D-Type Flip-Flop 极性:Inverting, Non-Inverting 输入类型:CMOS 输出类型: 传播延迟时间:4.4 ns 高电平输出电流:- 16 mA 低电平输出电流:16 mA 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:X2SON-8 封装:Reel |
| MC74VHCT574ADTR2 | 功能描述:触发器 5V CMOS Octal RoHS:否 制造商:Texas Instruments 电路数量:2 逻辑系列:SN74 逻辑类型:D-Type Flip-Flop 极性:Inverting, Non-Inverting 输入类型:CMOS 输出类型: 传播延迟时间:4.4 ns 高电平输出电流:- 16 mA 低电平输出电流:16 mA 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:X2SON-8 封装:Reel |
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