参数资料
型号: MC9328MX1DVM20R2
厂商: Freescale Semiconductor
文件页数: 17/100页
文件大小: 0K
描述: IC MCU I.MX 200MHZ 256-MAPBGA
标准包装: 1
系列: i.MX1
核心处理器: ARM9
芯体尺寸: 32-位
速度: 200MHz
连通性: EBI/EMI,I²C,MMC,智能卡,SPI,SSI,UART/USART,USB
外围设备: DMA,I²S,LCD,POR,PWM,WDT
输入/输出数: 110
程序存储器类型: ROMless
电压 - 电源 (Vcc/Vdd): 1.7 V ~ 3.3 V
振荡器型: 外部
工作温度: -30°C ~ 70°C
封装/外壳: 256-MAPBGA
包装: 剪切带 (CT)
其它名称: MC9328MX1DVM20R2CT
Electrical Characteristics
MC9328MX1 Technical Data, Rev. 7
Freescale Semiconductor
23
in the system, these Bluetooth pins can be used as general purpose I/O pins and BTRFVDD can be used
as other NVDD pins.
For more information about I/O pads grouping per VDD, please refer to Table 2 on page 4.
3.3
Power Sequence Requirements
For required power-up and power-down sequencing, please refer to the “Power-Up Sequence” section of
application note AN2537 on the i.MX applications processor website.
3.4
DC Electrical Characteristics
Table 6 contains both maximum and minimum DC characteristics of the i.MX1 processor.
Table 5. Recommended Operating Range
Symbol
Rating
Minimum
Maximum
Unit
TA
Operating temperature range
MC9328MX1VM20\MC9328MX1VM15
070
°C
TA
Operating temperature range
MC9328MX1DVM20\MC9328MX1DVM15
-30
70
°C
TA
Operating temperature range
MC9328MX1CVM15
-40
85
°C
NVDD
I/O supply voltage (if using MSHC, CSI, SPI, BTA, LCD, and USBd which
are only 3 V interfaces)
2.70
3.30
V
NVDD
I/O supply voltage (if not using the peripherals listed above)
1.70
3.30
V
QVDD
Internal supply voltage (Core = 150 MHz)
1.70
1.90
V
QVDD
Internal supply voltage (Core = 200 MHz)
1.80
2.00
V
AVDD
Analog supply voltage
1.70
3.30
V
Table 6. Maximum and Minimum DC Characteristics
Number or
Symbol
Parameter
Min
Typical
Max
Unit
Iop
Full running operating current at 1.8V for QVDD, 3.3V for
NVDD/AVDD (Core = 96 MHz, System = 96 MHz, MPEG4
decoding playback from external memory card to both
external SSI audio decoder and driving TFT display panel,
and OS with MMU enabled memory system is running on
external SDRAM).
QVDD at
1.8V = 120mA;
NVDD+AVDD at
3.0V = 30mA
–mA
Sidd1
Standby current
(Core = 150 MHz, QVDD = 1.8V, temp = 25
°C)
–25
μA
Sidd2
Standby current
(Core = 150 MHz, QVDD = 1.8V, temp = 55
°C)
–45
μA
Sidd3
Standby current
(Core = 150 MHz, QVDD = 2.0V, temp = 25
°C)
–35
μA
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