收藏本站
参数资料
型号： MC9RS08KA1CDBR
厂商： Freescale Semiconductor
文件页数： 61/136页
文件大小： 0K
描述： IC CPU RS08 1K FLASH 62RAM 6-DFN
产品培训模块： USBSpyder08 Discovery Kit
MC9RS08KA8 Microcontroller
标准包装： 2,500
系列： RS08
核心处理器： RS08
芯体尺寸： 8-位
速度： 10MHz
外围设备： LVD，POR，WDT
输入/输出数： 2
程序存储器容量： 1KB（1K x 8）
程序存储器类型： 闪存
RAM 容量： 63 x 8
电压 - 电源 (Vcc/Vdd)： 1.8 V ~ 5.5 V
振荡器型： 内部
工作温度： -40°C ~ 85°C
封装/外壳： 6-VDFN 裸露焊盘
包装： 带卷 (TR)
Chapter 4 Memory
MC9RS08KA2 Series Data Sheet, Rev. 4
30
Freescale Semiconductor
Up to 1000 program/erase cycles at typical voltage and temperature
Security feature for Flash
4.6.2
Flash Programming Procedure
Programming of Flash memory is done on a row basis. A row consists of 64 consecutive bytes starting
from addresses $3X00, $3X40, $3X80, or $3XC0. Use the following procedure to program a row of Flash
memory:
1. Apply external VPP.
2. Set the PGM bit. This configures the memory for program operation and enables the latching of
address and data for programming.
3. Write any data to any Flash location, via the high page accessing window $00C0–$00FF, within
the address range of the row to be programmed. (Prior to the data writing operation, the PAGESEL
register must be configured correctly to map the high page accessing window to the corresponding
Flash row).
4. Wait for a time, tnvs.
5. Set the HVEN bit.
6. Wait for a time, tpgs.
7. Write data to the Flash location to be programmed.
8. Wait for a time, tprog.
9. Repeat steps 7 and 8 until all bytes within the row are programmed.
10. Clear the PGM bit.
11. Wait for a time, tnvh.
12. Clear the HVEN bit.
13. After time, trcv, the memory can be accessed in read mode again.
14. Remove external VPP.
This program sequence is repeated throughout the memory until all data is programmed.
NOTE
Flash memory cannot be programmed or erased by software code executed
from Flash locations. To program or erase Flash, commands must be
executed from RAM or BDC commands. User code should not enter wait or
stop during erase or program sequence.
These operations must be performed in the order shown; other unrelated
operations may occur between the steps.
4.6.3
Flash Mass Erase Operation
Use the following procedure to mass erase the entire Flash memory:
1. Apply external VPP.
2. Set the MASS bit in the Flash control register.
相关PDF资料
PDF描述
MC9RS08KB2CSC MCU 8-BIT 2K FLASH 8-SOIC
MC9S08AC128CFUE MCU 128K FLASH 8K RAM 64-QFP
MC9S08AC48MPUE MCU 8BIT 48K FLASH 64-LQFP
MC9S08AC8CFDE IC MCU 8BIT 8K FLASH 48-QFN
MC9S08AW60MFUE IC MCU 8BIT 60K FLASH 64-QFP
相关代理商/技术参数
参数描述
MC9RS08KA1CPC 功能描述:8位微控制器 -MCU 1K FLASH W/ ACMP 62 RAM RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
MC9RS08KA1CSC 功能描述:8位微控制器 -MCU 1K FLASH W/ ACMP 62 RAM RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
MC9RS08KA1CSCR 功能描述:8位微控制器 -MCU 1K FLASH W/ ACMP 62 RAM RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
MC9RS08KA1DB 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Microcontrollers
MC9RS08KA1PC 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Microcontrollers
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*