参数资料
型号: MC9RS08KA2CSC
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 微控制器/微处理器
英文描述: 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDSO8
封装: ROHS COMPLIANT, SOIC-8
文件页数: 14/136页
文件大小: 2792K
代理商: MC9RS08KA2CSC
Appendix A Electrical Characteristics
MC9RS08KA2 Series Data Sheet, Rev. 4
110
Freescale Semiconductor
A.3
Thermal Characteristics
This section provides information about operating temperature range, power dissipation, and package
thermal resistance. Power dissipation on I/O pins is usually small compared to the power dissipation in
on-chip logic and voltage regulator circuits and it is user-determined rather than being controlled by the
MCU design. In order to take PI/O into account in power calculations, determine the difference between
actual pin voltage and VSS or VDD and multiply by the pin current for each I/O pin. Except in cases of
unusually high pin current (heavy loads), the difference between pin voltage and VSS or VDD will be very
small.
The average chip-junction temperature (TJ) in °C can be obtained from:
TJ = TA + (PD × θJA)
Eqn. A-1
where:
TA = Ambient temperature, °C
θJA = Package thermal resistance, junction-to-ambient, °C/W
PD = Pint + PI/O
Pint = IDD × VDD, Watts — chip internal power
PI/O = Power dissipation on input and output pins — user determined
For most applications, PI/O << Pint and can be neglected. An approximate relationship between PD and TJ
(if PI/O is neglected) is:
Table A-2. Thermal Characteristics
Rating
Symbol
Value
Unit
Operating temperature range (packaged)
TA
TL to TH
–40 to 85
°C
Maximum junction temperature
TJMAX
105
°C
Thermal resistance 1,2,3,4
6-pin DFN
1s
2s2p
8-pin PDIP
1s
2s2p
8-pin SOIC
1s
2s2p
1 Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance,
mounting site (board) temperature, ambient temperature, air flow, power dissipation of other
components on the board, and board thermal resistance.
2 Junction to Ambient Natural Convection
3 1s - Single Layer Board, one signal layer
4 2s2p - Four Layer Board, 2 signal and 2 power layers
θ
JA
225
53
115
74
160
98
°C/W
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