参数资料
型号: MC9RS08LA8CFT
厂商: Freescale Semiconductor
文件页数: 16/33页
文件大小: 0K
描述: MCU 8BIT 8K FLASH W/LCD 48-QFN
标准包装: 260
系列: RS08
核心处理器: RS08
芯体尺寸: 8-位
速度: 20MHz
连通性: SCI,SPI
外围设备: LCD,LVD,POR,PWM,WDT
输入/输出数: 31
程序存储器容量: 8KB(8K x 8)
程序存储器类型: 闪存
RAM 容量: 256 x 8
电压 - 电源 (Vcc/Vdd): 2.7 V ~ 5.5 V
数据转换器: A/D 6x10b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 48-VFQFN 裸露焊盘
包装: 托盘
Electrical Characteristics
MC9RS08LA8 Series MCU Data Sheet, Rev. 2
Freescale Semiconductor
23
Figure 15. Reset Timing
Figure 16. KBI Pulse Width
3.13
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory. For detailed information about program/erase operations, see the reference manual.
External RESET pulse width1
textrst
150
ns
KBI pulse width2
tKBIPW
1.5 tcyc
—ns
KBI pulse width in stop1
tKBIPWS
100
ns
Port rise and fall time (load = 50 pF)3
Slew rate control disabled (PTxSE = 0)
Slew rate control enabled (PTxSE = 1)
tRise, tFall
11
35
ns
1 This is the shortest pulse that is guaranteed to pass through the pin input filter circuitry. Shorter pulses may or may not be
recognized.
2 This is the minimum pulse width that is guaranteed to pass through the pin synchronization circuitry. Shorter pulses may or
may not be recognized. In stop mode, the synchronizer is bypassed so shorter pulses can be recognized in that case.
3 Timing is shown with respect to 20% VDD and 80% VDD levels. Temperature range –40 °C to 85 °C.
Table 17. Flash Characteristics
Characteristic
Symbol
Min
Typical1
Max
Unit
Supply voltage for program/erase
VDD
2.7
5.5
V
Program/Erase voltage
VPP
11.8
12
12.2
V
VPP current
Program
Mass erase
IVPP_prog
IVPP_erase
200
100
μA
Supply voltage for read operation 0 < fBus < 10 MHz
VRead
2.7
5.5
V
Table 16. Control Timing (continued)
Characteristic
Symbol
Min
Typical
Max
Unit
textrst
RESET
tKBIPW
KBI Pin
tKBIPW
KBI Pin
(rising or high level)
(falling or low level)
tKBIPWS
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