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参数资料
| 型号： | MC9S08AC128CFUE |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 27/40页 |
| 文件大小： | 0K |
| 描述： | MCU 128K FLASH 8K RAM 64-QFP |
| 标准包装： | 84 |
| 系列： | S08 |
| 核心处理器： | S08 |
| 芯体尺寸： | 8-位 |
| 速度： | 40MHz |
| 连通性： | I²C，LIN，SCI，SPI |
| 外围设备： | LVD，POR，PWM，WDT |
| 输入/输出数： | 54 |
| 程序存储器容量： | 128KB（128K x 8） |
| 程序存储器类型： | 闪存 |
| RAM 容量： | 8K x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 2.7 V ~ 5.5 V |
| 数据转换器： | A/D 16x10b |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 64-QFP |
| 包装： | 托盘 |
| 产品目录页面： | 727 (CN2011-ZH PDF) |
| 配用： | DEMOACKIT-ND - KIT DEMO KIT FOR DC9S08A DEMOJM-ND - KIT DEMO FOR JM MCU FAMILY |
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Chapter 3 Electrical Characteristics and Timing Specifications
MC9S08AC128 MCU Series Data Sheet, Rev. 4
Freescale Semiconductor
33
3.12
FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the Flash memory.
Program and erase operations do not require any special power sources other than the normal VDD supply.
Table 3-15. Flash Characteristics
Num
C
Characteristic
Symbol
Min
Typ1
1 Typical values are based on characterization data at V
DD = 5.0 V, 25C unless otherwise stated.
Max
Unit
1P
Supply voltage for program/erase
Vprog/erase
2.7
5.5
V
2P
Supply voltage for read operation
VRead
2.7
5.5
V
P
Internal FCLK frequency2
2 The frequency of this clock is controlled by a software setting.
fFCLK
150
200
kHz
4P
Internal FCLK period (1/FCLK)
tFcyc
56.67
s
5P
Byte program time (random location)(2)
tprog
9
tFcyc
6C
Byte program time (burst mode)(2)
tBurst
4
tFcyc
7P
Page erase time3
3 These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
tPage
4000
tFcyc
8P
Mass erase time(2)
tMass
20,000
tFcyc
9C
Program/erase endurance4
TL to TH = –40C to + 125C
T = 25
C
4 Typical endurance for Flash was evaluated for this product family on the 9S12Dx64. For additional information on
how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical
Endurance for Nonvolatile Memory.
10,000
—
100,000
—
cycles
10
C
Data retention5
5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25
C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines
typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MC9S08AC128CFUER | 制造商:Freescale Semiconductor 功能描述:128K FLASH, 8K RAM - Tape and Reel |
| MC9S08AC128CLKE | 功能描述:8位微控制器 -MCU 8 Bit 128K FLASH 8K RAM RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| MC9S08AC128M44E | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:8-Bit Microcontroller |
| MC9S08AC128M64E | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:8-Bit Microcontroller |
| MC9S08AC128M80E | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:8-Bit Microcontroller |
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