参数资料
型号: MC9S08AC128CLKE
厂商: Freescale Semiconductor
文件页数: 3/40页
文件大小: 0K
描述: MCU 128K FLASH 8K RAM 80-LQFP
标准包装: 90
系列: S08
核心处理器: S08
芯体尺寸: 8-位
速度: 40MHz
连通性: I²C,LIN,SCI,SPI
外围设备: LVD,POR,PWM,WDT
输入/输出数: 69
程序存储器容量: 128KB(128K x 8)
程序存储器类型: 闪存
RAM 容量: 8K x 8
电压 - 电源 (Vcc/Vdd): 2.7 V ~ 5.5 V
数据转换器: A/D 16x10b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 80-LQFP
包装: 托盘
产品目录页面: 727 (CN2011-ZH PDF)
配用: DEMOACKIT-ND - KIT DEMO KIT FOR DC9S08A
DEMOJM-ND - KIT DEMO FOR JM MCU FAMILY
MC9S08AC128 Series Data Sheet, Rev. 4
Freescale Semiconductor
11
Chapter 3
Electrical Characteristics and Timing Specifications
3.1
Introduction
This section contains electrical and timing specifications.
3.2
Parameter Classification
The electrical parameters shown in this supplement are guaranteed by various methods. To give the customer a better
understanding the following classification is used and the parameters are tagged accordingly in the tables where appropriate:
NOTE
The classification is shown in the column labeled “C” in the parameter tables where
appropriate.
3.3
Absolute Maximum Ratings
Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Stress beyond the
limits specified in Table 3-2 may affect device reliability or cause permanent damage to the device. For functional operating
conditions, refer to the remaining tables in this section.
This device contains circuitry protecting against damage due to high static voltage or electrical fields; however, it is advised
that normal precautions be taken to avoid application of any voltages higher than maximum-rated voltages to this
high-impedance circuit. Reliability of operation is enhanced if unused inputs are tied to an appropriate logic voltage level (for
instance, either VSS or VDD).
Table 3-1. Parameter Classifications
P
Those parameters are guaranteed during production testing on each individual device.
C
Those parameters are achieved by the design characterization by measuring a statistically relevant
sample size across process variations.
T
Those parameters are achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted. All values shown in the typical column are within this
category.
D
Those parameters are derived mainly from simulations.
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