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| 型号： | MC9S08GW64CLH |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 4/42页 |
| 文件大小： | 0K |
| 描述： | IC MCU 8BIT 64KB FLASH 64 LQFP |
| 标准包装： | 800 |
| 系列： | S08 |
| 核心处理器： | S08 |
| 芯体尺寸： | 8-位 |
| 速度： | 20MHz |
| 连通性： | I²C，LIN，SCI，SPI |
| 外围设备： | LCD，PWM，WDT |
| 输入/输出数： | 57 |
| 程序存储器容量： | 64KB（64K x 8） |
| 程序存储器类型： | 闪存 |
| RAM 容量： | 4K x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 1.8 V ~ 3.6 V |
| 数据转换器： | A/D 16x16b |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 64-LQFP |
| 包装： | 托盘 |
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MC9S08GW64 Series MCU Data Sheet, Rev. 3
Electrical Characteristics
Freescale Semiconductor
12
The average chip-junction temperature (TJ) in C can be obtained from:
TJ = TA + (PD JA)
Eqn. 1
where:
TA = Ambient temperature, C
JA = Package thermal resistance, junction-to-ambient, C/W
PD = Pint PI/O
Pint = IDD VDD, Watts — chip internal power
PI/O = Power dissipation on input and output pins — user determined
For most applications, PI/O Pint and can be neglected. An approximate relationship between PD and TJ (if PI/O is neglected)
is:
PD = K (TJ + 273C)
Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD (TA + 273C) + JA (PD)
2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring PD (at equilibrium)
for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving Equation 1 and Equation 2 iteratively
for any value of TA.
3.5
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early CMOS circuits,
normal handling precautions should be taken to avoid exposure to static discharge. Qualification tests are performed to ensure
that these devices can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. During
the device qualification, ESD stresses were performed for the human body model (HBM), the machine model (MM) and the
charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless instructed otherwise in the device specification.
Table 6. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human
Body Model
Series resistance
R1
1500
Storage capacitance
C
100
pF
Number of pulses per pin
—
3
Charge
Device
Model
Series resistance
R1
0
Storage capacitance
C
200
pF
Number of pulses per pin
—
3
Latch-up
Minimum input voltage limit
–2.5
V
Maximum input voltage limit
7.5
V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MC9S08GW64CLK | 功能描述:8位微控制器 -MCU S08 8bit Microcontroller RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| MC9S08GW64CLKR | 制造商:Freescale Semiconductor 功能描述:S08 8BIT MICROCONTROLLER 制造商:Freescale Semiconductor 功能描述:S08 8BIT MICROCONTROLLER - Tape and Reel 制造商:Freescale Semiconductor 功能描述:8-bit Microcontrollers - MCU S08 8BIT MICROCONTROLLER |
| MC9S08JE128 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Covers: MC9S08JE128 and MC9S08JE64 |
| MC9S08JE128CLH | 功能描述:8位微控制器 -MCU 140 RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| MC9S08JE128CLK | 功能描述:8位微控制器 -MCU 8BIT 128K FLASH RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
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