参数资料
型号: MC9S08JS16CFK
厂商: Freescale Semiconductor
文件页数: 18/32页
文件大小: 0K
描述: IC MCU 8BIT 16K FLASH 24QFN
标准包装: 490
系列: S08
核心处理器: S08
芯体尺寸: 8-位
速度: 48MHz
连通性: LIN,SCI,SPI,USB
外围设备: LVD,POR,PWM
输入/输出数: 14
程序存储器容量: 16KB(16K x 8)
程序存储器类型: 闪存
RAM 容量: 512 x 8
电压 - 电源 (Vcc/Vdd): 2.7 V ~ 5.5 V
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 24-VQFN 裸露焊盘
包装: 托盘
产品目录页面: 729 (CN2011-ZH PDF)
配用: DEMO9S08JS16-ND - BOARD DEMO FOR JS16 FAMILY
Electrical Characteristics
MC9S08JS16 Series MCU Data Sheet, Rev. 4
Freescale Semiconductor
25
3.12
USB Electricals
The USB electricals for the S08USBV1 module conform to the standards documented by the Universal
Serial Bus Implementers Forum. For the most up-to-date standards, visit http://www.usb.org.
If the Freescale S08USBV1 implementation requires additional or deviant electrical characteristics, this
space would be used to communicate that information.
Table 12. Flash Characteristics
Num
C
Characteristic
Symbol
Min
Typical1
1 Typical values are based on characterization data at V
DD = 5.0 V, 25 °C unless otherwise stated.
Max
Unit
1
D
Supply voltage for program/erase
Vprog/erase
2.7
5.5
V
2
D
Supply voltage for read operation
VRead
2.7
5.5
V
3
D
Internal FCLK frequency2
2 The frequency of this clock is controlled by a software setting.
fFCLK
150
200
kHz
4
D
Internal FCLK period (1/FCLK)
tFcyc
5
6.67
μs
5
P
Byte program time (random location)2
tprog
9
tFcyc
6
P
Byte program time (burst mode)2
tBurst
4
tFcyc
7
P
Page erase time3
3 These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
tPage
4000
tFcyc
8
P
Mass erase time2
tMass
20,000
tFcyc
9
C
Program/erase endurance4
TL to TH = –40°C to 85 °C
T = 25
°C
4 Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on
how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical
Endurance for Nonvolatile Memory.
10,000
100,000
cycles
10
C
Data retention5
5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25
°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines
typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
years
Table 13. Internal USB 3.3 V Voltage Regulator Characteristics
Symbol
Min
Typical
Max
Unit
Regulator operating voltage
Vregin
3.9
5.5
V
Vreg output
Vregout
33.3
3.6
V
Vreg filter capacitor
Cusbreg
100
pF
Vusb33 input with internal Vreg disabled
Vusb33in
33.3
3.6
V
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