参数资料
型号: MC9S08LG16CLH
厂商: Freescale Semiconductor
文件页数: 6/50页
文件大小: 0K
描述: IC MCU 8BIT LG16 FLASH 64-LQFP
标准包装: 160
系列: S08
核心处理器: S08
芯体尺寸: 8-位
速度: 40MHz
连通性: I²C,SCI,SPI
外围设备: LCD,LVD,PWM
输入/输出数: 53
程序存储器容量: 18KB(18K x 8)
程序存储器类型: 闪存
RAM 容量: 1.9K x 8
电压 - 电源 (Vcc/Vdd): 2.7 V ~ 5.5 V
数据转换器: A/D 12x12b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 64-LQFP
包装: 托盘
产品目录页面: 727 (CN2011-ZH PDF)
配用: DEMO9S08LL16-ND - BOARD DEMO FOR MC9S08LL16 MCU
MC9S08LG32 Series Data Sheet, Rev. 9
Electrical Characteristics
Freescale Semiconductor
14
D DC injection
current 5, 6, 7
VIN < VSS, VIN >
VDD
Single pin limit
IIC
——
2
mA
Total MCU limit, includes sum of
all stressed pins
——
25
mA
15
C Input Capacitance, all non-supply pins
CIn
——
8
pF
16
C RAM retention voltage
VRAM
2—
V
17
P POR rearm voltage
VPOR
0.9
1.4
2.0
V
18
D POR rearm time
tPOR
10
s
19
P Low-voltage detection threshold — high range
VDD falling
VDD rising
VLVD1
3.9
4.0
4.1
4.2
V
20
P Low-voltage detection threshold — low range
VDD falling
VDD rising
VLVD0
2.48
2.54
2.56
2.62
2.64
2.70
V
21
P Low-voltage warning threshold — high range 1
VDD falling
VDD rising
VLVW3
4.5
4.6
4.7
4.8
V
22
P Low-voltage warning threshold — high range 0
VDD falling
VDD rising
VLVW2
4.2
4.3
4.4
4.5
V
23
P Low-voltage warning threshold — low range 1
VDD falling
VDD rising
VLVW1
2.84
2.90
2.92
2.98
3.00
3.06
V
24
P Low-voltage warning threshold — low range 0
VDD falling
VDD rising
VLVW0
2.66
2.72
2.74
2.80
2.82
2.88
V
25
P Low-voltage inhibit reset/recover hysteresis
5 V
3 V
Vhys
100
60
—mV
1 Typical values are measured at 25
C. Characterized, not tested
2 Measured with VIn = VDD or VSS.
3 Measured with VIn = VSS.
4 Measured with VIn = VDD.
5 All functional non-supply pins, except for PTC6 are internally clamped to V
SS and VDD.
6 Input must be current limited to the value specified. To determine the value of the required current-limiting resistor, calculate
resistance values for positive and negative clamp voltages, then use the larger of the two values.
7 Power supply must maintain regulation within operating V
DD range during instantaneous and operating maximum current
conditions. If the positive injection current (VIn > VDD) is greater than IDD, the injection current may flow out of VDD and could
result in external power supply going out of regulation. Ensure that external VDD load will shunt current greater than maximum
injection current. This will be the greatest risk when the MCU is not consuming power. For instance, if no system clock is
present, or if clock rate is very low (which would reduce overall power consumption).
Table 8. DC Characteristics (continued)
Num C
Characteristic
Symbol
Min
Typ1
Max
Unit
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