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参数资料
| 型号： | MC9S08LG32CLK |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 28/50页 |
| 文件大小： | 0K |
| 描述： | IC MCU 8BIT LG32 FLASH 80-LQFP |
| 标准包装： | 90 |
| 系列： | S08 |
| 核心处理器： | S08 |
| 芯体尺寸： | 8-位 |
| 速度： | 40MHz |
| 连通性： | I²C，SCI，SPI |
| 外围设备： | LCD，LVD，PWM |
| 输入/输出数： | 69 |
| 程序存储器容量： | 32KB（32K x 8） |
| 程序存储器类型： | 闪存 |
| RAM 容量： | 1.9K x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 2.7 V ~ 5.5 V |
| 数据转换器： | A/D 16x12b |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 80-LQFP |
| 包装： | 托盘 |
| 产品目录页面： | 727 (CN2011-ZH PDF) |
| 配用： | DEMO9S08LG32-ND - DEMO BOARD FOR LG32 FAMILY MCU |
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MC9S08LG32 Series Data Sheet, Rev. 9
Electrical Characteristics
Freescale Semiconductor
34
2.12
LCD Specifications
2.13
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash memory.
Program and erase operations do not require any special power sources other than the normal VDD supply. For more detailed
information about program/erase operations, see the Memory section.
Table 17. LCD Electricals, 3 V Glass
C
Characteristic
Symbol
Min
Typ
Max
Units
D
VLL3 Supply Voltage
VLL3
2.7
—
5.5
V
D
LCD Frame Frequency
fFrame
28
30
64
Hz
D
LCD Charge Pump Capacitance
CLCD
—100
100
pF
D
LCD Bypass Capacitance
CBYLCD
—100
100
D
LCD Glass Capacitance
Cglass
—
2000
8000
Table 18. Flash Characteristics
C
Characteristic
Symbol
Min
Typical
Max
Unit
D
Supply voltage for program/erase
–40
C to 85 CV
prog/erase
2.7
5.5
V
D
Supply voltage for read operation
VRead
2.7
5.5
V
D
Internal FCLK frequency1
1
The frequency of this clock is controlled by a software setting.
fFCLK
150
200
kHz
D
Internal FCLK period (1/FCLK)
tFcyc
56.67
s
C
Byte program time (random location)2
tprog
9tFcyc
C
Byte program time (burst mode)2
tBurst
4tFcyc
C
Page erase time2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
tPage
4000
tFcyc
C
Mass erase time2
tMass
20,000
tFcyc
D
Byte program current3
3 The program and erase currents are additional to the standard run I
DD. These values are measured at room temperatures
with VDD = 5.0 V, bus frequency = 4.0 MHz.
RIDDBP
—4
—
mA
D
Page erase current3
RIDDPE
—6
—
mA
C
Program/erase endurance4
TL to TH = –40 C to + 85 C
T = 25
C
4 Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
10,000
—
100,000
—
cycles
C
Data retention5
5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25
C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MC9S08LG32CLK | 制造商:Freescale Semiconductor 功能描述:IC 8BIT MCU HCS08 40MHZ LQFP-80 |
| MC9S08LG32VLK | 制造商:Freescale Semiconductor 功能描述:8-BIT HCS08 CISC 32KB FLASH 3.3V/5V 80-PIN LQFP TRAY - Bulk |
| MC9S08LH36 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Advanced Information |
| MC9S08LH36CLH | 功能描述:8位微控制器 -MCU S08 CPU, 36K FLASH, 64LQFP RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| MC9S08LH36CLK | 功能描述:8位微控制器 -MCU S08 36K Flash 80LQFP RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
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