参数资料
型号: MC9S08LL16CGT
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 微控制器/微处理器
英文描述: 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, QCC48
封装: ROHS COMPLIANT, TQFN-48
文件页数: 4/44页
文件大小: 951K
代理商: MC9S08LL16CGT
MC9S08LL16 Series MCU Data Sheet, Rev. 6
Electrical Characteristics
Freescale Semiconductor
12
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring
PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by
solving Equation 3-1 and Equation 3-2 iteratively for any value of TA.
3.5
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions should be taken to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification, ESD stresses were performed for the human body
model (HBM), the machine model (MM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless instructed otherwise in the device
specification.
Table 6. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human
Body Model
Series resistance
R1
1500
Storage capacitance
C
100
pF
Number of pulses per pin
3
Charge
Device
Model
Series resistance
R1
0
Storage capacitance
C
200
pF
Number of pulses per pin
3
Latch-up
Minimum input voltage limit
–2.5
V
Maximum input voltage limit
7.5
V
Table 7. ESD and Latch-Up Protection Characteristics
No.
Rating1
1 Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
Symbol
Min
Max
Unit
1
Human body model (HBM)
VHBM
2000
V
2
Charge device model (CDM)
VCDM
500
V
3
Latch-up current at TA = 85CILAT
100
mA
相关PDF资料
PDF描述
MC9S08LL64CLK 8-BIT, FLASH, 40 MHz, MICROCONTROLLER, PQFP80
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相关代理商/技术参数
参数描述
MC9S08LL16CLF 功能描述:8位微控制器 -MCU 8BIT16KFLASH 2KRAM RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
MC9S08LL16CLF 制造商:Freescale Semiconductor 功能描述:IC 8BIT MCU HCS08 20MHZ LQFP-48
MC9S08LL16CLFR 制造商:Freescale Semiconductor 功能描述:8-BIT HCS08 CISC 16KB FLASH 2.5V/3.3V 48-PIN LQFP T/R - Tape and Reel
MC9S08LL16CLH 功能描述:8位微控制器 -MCU 8BIT 16KFLASH 2KRAM RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
MC9S08LL36 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Technical Data