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| 型号： | MC9S08LL8CLF |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP48 |
| 封装： | 7 X 7 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, MS-026BBC, LQFP-48 |
| 文件页数： | 32/50页 |
| 文件大小： | 1137K |
| 代理商： | MC9S08LL8CLF |
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MC9S08LL16 Series MCU Data Sheet, Rev. 4
Electrical Characteristics
Freescale Semiconductor
38
3.15
EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
3.15.1
Radiated Emissions
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell
method in accordance with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed
with the microcontroller installed on a custom EMC evaluation board while running specialized EMC test
software. The radiated emissions from the microcontroller are measured in a TEM cell in two package
orientations (North and East).
Table 20. Flash Characteristics
C
Characteristic
Symbol
Min
Typical
Max
Unit
D
Supply voltage for program/erase
-40
°C to 85°CV
prog/erase
1.8
3.6
V
D
Supply voltage for read operation
VRead
1.8
3.6
V
D
Internal FCLK frequency1
1
The frequency of this clock is controlled by a software setting.
fFCLK
150
200
kHz
D
Internal FCLK period (1/FCLK)
tFcyc
56.67
μs
P
Byte program time (random location)2
tprog
9tFcyc
P
Byte program time (burst mode)2
tBurst
4tFcyc
P
Page erase time2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
tPage
4000
tFcyc
P
Mass erase time2
tMass
20,000
tFcyc
D
Byte program current3
3 The program and erase currents are additional to the standard run I
DD. These values are measured at room temperatures
with VDD = 3.0 V, bus frequency = 4.0 MHz.
RIDDBP
—4
—
mA
D
Page erase current3
RIDDPE
—6
—
mA
C
Program/erase endurance4
TL to TH = –40°C to + 85°C
T = 25
°C
4
Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
10,000
—
100,000
—
cycles
C
Data retention5
5
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25
°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please
refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MC9S08LL8CLF | 制造商:Freescale Semiconductor 功能描述:IC 8BIT MCU HCS08 20MHZ LQFP-48 |
| MC9S08LL8CLH | 功能描述:IC MCU 8BIT 10KB FLASH 64-LQFP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:S08 标准包装:1 系列:AVR® ATmega 核心处理器:AVR 芯体尺寸:8-位 速度:16MHz 连通性:I²C，SPI，UART/USART 外围设备:欠压检测/复位，POR，PWM，WDT 输入/输出数:32 程序存储器容量:32KB（16K x 16） 程序存储器类型:闪存 EEPROM 大小:1K x 8 RAM 容量:2K x 8 电压 - 电源 (Vcc/Vdd):2.7 V ~ 5.5 V 数据转换器:A/D 8x10b 振荡器型:内部 工作温度:-40°C ~ 125°C 封装/外壳:44-TQFP 包装:剪切带 (CT) 其它名称:ATMEGA324P-B15AZCT |
| MC9S08MM128 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Advanced Information |
| MC9S08MM128CLH | 功能描述:8位微控制器 -MCU 8BIT 128K FLASH RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| MC9S08MM128CLK | 功能描述:8位微控制器 -MCU 8BIT 128K FLASH RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
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