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参数资料
| 型号： | MC9S08MM64CLH |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 37/52页 |
| 文件大小： | 0K |
| 描述： | IC MCU 8BIT 32K FLASH 64LQFP |
| 标准包装： | 160 |
| 系列： | S08 |
| 核心处理器： | S08 |
| 芯体尺寸： | 8-位 |
| 速度： | 48MHz |
| 连通性： | I²C，SCI，SPI，USB |
| 外围设备： | LVD，POR，PWM，WDT |
| 输入/输出数： | 33 |
| 程序存储器容量： | 64KB（64K x 8） |
| 程序存储器类型： | 闪存 |
| RAM 容量： | 12K x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 1.8 V ~ 3.6 V |
| 数据转换器： | A/D 6x16b，D/A 1x12b |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 64-LQFP |
| 包装： | 托盘 |
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Electrical Characteristics
Freescale Semiconductor
42
2.13
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the Flash memory.
Program and erase operations do not require any special power sources other than the normal VDD supply. For more detailed
information about program/erase operations, see the Memory chapter in the Reference Manual for this device
(MC9S08MM128RM).
Table 23. Flash Characteristics
#
Characteristic
Symbol
Min
Typical
Max
Unit
C
1
Supply voltage for program/erase
–40
C to 105CV
prog/erase
1.8
—
3.6
V
D
2
Supply voltage for read operation
VRead
1.8
—
3.6
V
D
3
Internal FCLK frequency1
1 The frequency of this clock is controlled by a software setting.
fFCLK
150
—
200
kHz
D
4
Internal FCLK period (1/FCLK)
tFcyc
5
—
6.67
sD
5
Byte program time (random location)2
tprog
9tFcyc
P
6
Byte program time (burst mode)2
tBurst
4tFcyc
P
7
Page erase time2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
tPage
4000
tFcyc
P
8
Mass erase time2
tMass
20,000
tFcyc
P
9
Program/erase endurance3
TL to TH = –40C to + 105C
T = 25
C
3 Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory.
10,000
—
100,000
—
cycles
C
10
Data retention4
4 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to
25
C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to
Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
C
Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MC9S08MM64CLK | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Advanced Information |
| MC9S08MM64CMB | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Advanced Information |
| MC9S08MM64VLH | 功能描述:8位微控制器 -MCU 8BIT 64K FLASH RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| MC9S08MM64VLK | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Advanced Information |
| MC9S08MM64VMB | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Advanced Information |
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