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| 型号： | MC9S08QE128CLC |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 8-BIT, FLASH, 50.33 MHz, MICROCONTROLLER, PQFP32 |
| 封装： | 7 X 7 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, LQFP-32 |
| 文件页数： | 28/52页 |
| 文件大小： | 834K |
| 代理商： | MC9S08QE128CLC |
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MC9S08QE128 Series Advance Information Data Sheet, Rev. 3
Electrical Characteristics
Freescale Semiconductor
34
3.11.1
Radiated Emissions
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell method in accordance
with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed with the microcontroller installed on a
custom EMC evaluation board while running specialized EMC test software. The radiated emissions from the microcontroller
are measured in a TEM cell in two package orientations (North and East).
The maximum radiated RF emissions of the tested conguration in all orientations are less than or equal to the reported
emissions levels.
3.11.2
Conducted Transient Susceptibility
Microcontroller transient conducted susceptibility is measured in accordance with an internal Freescale test method. The
measurement is performed with the microcontroller installed on a custom EMC evaluation board and running specialized EMC
test software designed in compliance with the test method. The conducted susceptibility is determined by injecting the transient
susceptibility signal on each pin of the microcontroller. The transient waveform and injection methodology is based on IEC
61000-4-4 (EFT/B). The transient voltage required to cause performance degradation on any pin in the tested conguration is
greater than or equal to the reported levels unless otherwise indicated by footnotes below Table 20.
Table 19. Radiated Emissions, Electric Field
Parameter
Symbol
Conditions
Frequency
fOSC/fBUS
Level1
(Max)
1 Data based on qualication test results.
Unit
Radiated emissions,
electric eld
VRE_TEM
VDD = TBD
TA = +25
oC
package type
TBD
0.15 – 50 MHz
TBD crystal
TBD bus
TBD
dB
μV
50 – 150 MHz
TBD
150 – 500 MHz
TBD
500 – 1000 MHz
TBD
IEC Level
TBD
—
SAE Level
TBD
—
Table 20. Conducted Susceptibility, EFT/B
Parameter
Symbol
Conditions
fOSC/fBUS
Result
Amplitude1
(Min)
1 Data based on qualication test results. Not tested in production.
Unit
Conducted susceptibility, electrical
fast transient/burst (EFT/B)
VCS_EFT
VDD = TBD
TA = +25
oC
package type
TBD
TBD crystal
TBD bus
A
TBD
kV
B
TBD
C
TBD
D
TBD
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相关代理商/技术参数 |
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|---|---|
| MC9S08QE128CLD | 功能描述:8位微控制器 -MCU 128K FLASH RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| MC9S08QE128CLH | 功能描述:8位微控制器 -MCU Flexis Series 8 Bit 128K FLASH RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| MC9S08QE128CLHR | 功能描述:8位微控制器 -MCU 8 Bit, 128K Flash RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| MC9S08QE128CLK | 功能描述:8位微控制器 -MCU Flexis Series 8 Bit 128K FLASH RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| MC9S08QE128CQD | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:8-Bit HCS08 Central Processor Unit |
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