参数资料
型号: MC9S12C96MFA25
厂商: MOTOROLA INC
元件分类: 微控制器/微处理器
英文描述: 16-BIT, FLASH, 25 MHz, MICROCONTROLLER, PQFP48
封装: LQFP-48
文件页数: 8/136页
文件大小: 2022K
代理商: MC9S12C96MFA25
Device User Guide — 9S12C128DGV1/D V01.05
105
B.5 NVM, Flash and EEPROM
B.5.1 NVM timing
The time base for all NVM program or erase operations is derived from the oscillator. A minimum
oscillator frequency fNVMOSC is required for performing program or erase operations. The NVM modules
do not have any means to monitor the frequency and will not prevent program or erase operation at
frequencies above or below the specified minimum. Attempting to program or erase the NVM modules at
a lower frequency a full program or erase transition is not assured.
The Flash program and erase operations are timed using a clock derived from the oscillator using the
FCLKDIV and ECLKDIV registers respectively. The frequency of this clock must be set within the limits
specified as fNVMOP.
The minimum program and erase times shown in Table B-8 are calculated for maximum fNVMOP and
maximum fbus. The maximum times are calculated for minimum fNVMOP and a fbus of 2MHz.
B.5.1.1 Single Word Programming
The programming time for single word programming is dependant on the bus frequency as a well as on
the frequency f¨NVMOP and can be calculated according to the following formula.
B.5.1.2 Row Programming
Generally the time to program a consecutive word can be calculated as:
For the C16, GC16, C32 and GC32 device flash arrays, where up to 32 words in a row can be programmed
consecutively by keeping the command pipeline filled, the time to program a whole row is:
For the C64, GC64, C96, C128 and GC128 device flash arrays, where up to 64 words in a row can be
programmed consecutively by keeping the command pipeline filled, the time to program a whole row is:
Row programming is more than 2 times faster than single word programming.
t
swpgm
9
1
f
NVMOP
---------------------
25
1
f
bus
----------
+
=
t
bwpgm
4
1
f
NVMOP
---------------------
9
1
f
bus
----------
+
=
t
brpgm
t
swpgm
31 t
bwpgm
+
=
t
brpgm
t
swpgm
63 t
bwpgm
+
=
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相关代理商/技术参数
参数描述
MC9S12C96MFAE 功能描述:16位微控制器 - MCU 9S12C96 (KOI) RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
MC9S12C96MFUE 功能描述:16位微控制器 - MCU 9S12C96 (KOI) RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
MC9S12C96MPBE 功能描述:IC MCU 96K FLASH 4K RAM 52-LQFP RoHS:否 类别:集成电路 (IC) >> 嵌入式 - 微控制器, 系列:HCS12 标准包装:330 系列:- 核心处理器:- 芯体尺寸:8/16-位 速度:40MHz 连通性:UART/USART 外围设备:DMA,PWM,WDT 输入/输出数:32 程序存储器容量:- 程序存储器类型:外部程序存储器 EEPROM 大小:- RAM 容量:- 电压 - 电源 (Vcc/Vdd):4.5 V ~ 5.5 V 数据转换器:- 振荡器型:内部 工作温度:-40°C ~ 85°C 封装/外壳:100-BQFP 包装:管件
MC9S12C96MPBER 功能描述:IC MCU 96K FLASH 4K RAM 52-LQFP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器, 系列:HCS12 标准包装:1 系列:87C 核心处理器:MCS 51 芯体尺寸:8-位 速度:16MHz 连通性:SIO 外围设备:- 输入/输出数:32 程序存储器容量:8KB(8K x 8) 程序存储器类型:OTP EEPROM 大小:- RAM 容量:256 x 8 电压 - 电源 (Vcc/Vdd):4 V ~ 6 V 数据转换器:- 振荡器型:外部 工作温度:0°C ~ 70°C 封装/外壳:44-DIP 包装:管件 其它名称:864285
MC9S12C96VFAE 功能描述:IC MCU 96K FLASH 4K RAM 48-LQFP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器, 系列:HCS12 标准包装:1 系列:87C 核心处理器:MCS 51 芯体尺寸:8-位 速度:16MHz 连通性:SIO 外围设备:- 输入/输出数:32 程序存储器容量:8KB(8K x 8) 程序存储器类型:OTP EEPROM 大小:- RAM 容量:256 x 8 电压 - 电源 (Vcc/Vdd):4 V ~ 6 V 数据转换器:- 振荡器型:外部 工作温度:0°C ~ 70°C 封装/外壳:44-DIP 包装:管件 其它名称:864285