参数资料
型号: MC9S12D64VPV
厂商: MOTOROLA INC
元件分类: 微控制器/微处理器
英文描述: 16-BIT, FLASH, 25 MHz, MICROCONTROLLER, PQFP112
封装: LQFP-112
文件页数: 116/120页
文件大小: 1762K
代理商: MC9S12D64VPV
MC9S12DJ64 Device User Guide — V01.08
95
A.3.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The failure rates for data retention and program/erase cycling are specified at the operating conditions
noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
3. Maximum Erase and Programming times are achieved under particular combinations of fNVMOP and bus frequency fbus.
Refer to formulae in Sections A.3.1.1 - A.3.1.4 for guidance.
4. Burst Programming operations are not applicable to EEPROM
5. Minimum Erase times are achieved under maximum NVM operating frequency fNVMOP.
6. Minimum time, if first word in the array is not blank
7. Maximum time to complete check on an erased block
Table A-12 NVM Reliability Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max
Unit
1C
Data Retention at an average junction temperature of
TJavg = 70°C
tNVMRET
15
Years
2
C Flash number of Program/Erase cycles
nFLPE
10,000
Cycles
3C
EEPROM number of Program/Erase cycles
(–40
°C
T
J 0°C)
nEEPE
10,000
Cycles
4C
EEPROM number of Program/Erase cycles
(0
°C < T
J 140°C)
nEEPE
100,000
Cycles
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