参数资料
型号: MC9S12DB128MPVE
厂商: MOTOROLA INC
元件分类: 微控制器/微处理器
英文描述: 16-BIT, FLASH, 25 MHz, MICROCONTROLLER, PQFP112
封装: LEAD FREE, LQFP-112
文件页数: 3/138页
文件大小: 2093K
代理商: MC9S12DB128MPVE
MC9S12DT128 Device User Guide — V02.11
100
A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
A.1.7 Operating Conditions
This chapter describes the operating conditions of the device. Unless otherwise noted those conditions
apply to all the following data.
NOTE:
Please refer to the temperature rating of the device (C, V, M) with regards to the
ambient temperature TA and the junction temperature TJ. For power dissipation
Table A-2 ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human Body
Series Resistance
R1
1500
Ohm
Storage Capacitance
C
100
pF
Number of Pulse per pin
positive
negative
3
Machine
Series Resistance
R1
0
Ohm
Storage Capacitance
C
200
pF
Number of Pulse per pin
positive
negative
3
Latch-up
Minimum input voltage limit
–2.5
V
Maximum input voltage limit
7.5
V
Table A-3 ESD and Latch-Up Protection Characteristics
Num
C
Rating
Symbol
Min
Max
Unit
1
C Human Body Model (HBM)
VHBM
2000
V
2
C Machine Model (MM)
VMM
200
V
3
C Charge Device Model (CDM)
VCDM
500
V
4C
Latch-up Current at 125
°C
positive
negative
ILAT
+100
–100
–mA
5C
Latch-up Current at 27
°C
positive
negative
ILAT
+200
–200
–mA
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