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参数资料
型号： MC9S12DG128CFUE
厂商： FREESCALE SEMICONDUCTOR INC
元件分类： 微控制器/微处理器
英文描述： 16-BIT, FLASH, 25 MHz, MICROCONTROLLER, PQFP80
封装： PLASTIC, LQFP-80
文件页数： 15/142页
文件大小： 1799K
代理商： MC9S12DG128CFUE
Device User Guide — 9S12DT128DGV2/D V02.16
111
Freescale Semiconductor
A.3 NVM, Flash and EEPROM
NOTE:
Unless otherwise noted the abbreviation NVM (Non Volatile Memory) is used for
both Flash and EEPROM.
A.3.1 NVM timing
The time base for all NVM program or erase operations is derived from the oscillator. A minimum
oscillator frequency fNVMOSC is required for performing program or erase operations. The NVM modules
do not have any means to monitor the frequency and will not prevent program or erase operation at
frequencies above or below the specified minimum. Attempting to program or erase the NVM modules at
a lower frequency a full program or erase transition is not assured.
The Flash and EEPROM program and erase operations are timed using a clock derived from the oscillator
using the FCLKDIV and ECLKDIV registers respectively. The frequency of this clock must be set within
the limits specified as fNVMOP.
The minimum program and erase times shown in (Table A-11) are calculated for maximum fNVMOP and
maximum fbus. The maximum times are calculated for minimum fNVMOP and a fbus of 2MHz.
A.3.1.1 Single Word Programming
The programming time for single word programming is dependant on the bus frequency as a well as on
the frequency fNVMOP and can be calculated according to the following formula.
A.3.1.2 Row Programming
This applies only to the Flash where up to 32 words in a row can be programmed consecutively by keeping
the command pipeline filled. The time to program a consecutive word can be calculated as:
The time to program a whole row is:
Row programming is more than 2 times faster than single word programming.
A.3.1.3 Sector Erase
Erasing a 512 byte Flash sector or a 4 byte EEPROM sector takes:
t
swpgm
9
1
f
NVMOP
---------------------
25
1
f
bus
----------
+
=
t
bwpgm
4
1
f
NVMOP
---------------------
9
1
f
bus
----------
+
=
t
brpgm
t
swpgm
31 t
bwpgm
+
=
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相关代理商/技术参数
参数描述
MC9S12DG128CFUER 功能描述:16位微控制器 - MCU 128K FLASH 9S12 MCU MARL RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
MC9S12DG128CFUER 制造商:Freescale Semiconductor 功能描述:IC 16BIT MCU 25MHz 80-BQFP
MC9S12DG128CFUR2 功能描述:16位微控制器 - MCU 128K FLASH HCS12 MCU RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
MC9S12DG128CPV 功能描述:IC MCU 128K FLASH 25MHZ 112-LQFP RoHS:否 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:HCS12 标准包装:250 系列:56F8xxx 核心处理器:56800E 芯体尺寸:16-位 速度:60MHz 连通性:CAN，SCI，SPI 外围设备:POR，PWM，温度传感器，WDT 输入/输出数:21 程序存储器容量:40KB（20K x 16） 程序存储器类型:闪存 EEPROM 大小:- RAM 容量:6K x 16 电压 - 电源 (Vcc/Vdd):2.25 V ~ 3.6 V 数据转换器:A/D 6x12b 振荡器型:内部 工作温度:-40°C ~ 125°C 封装/外壳:48-LQFP 包装:托盘 配用:MC56F8323EVME-ND - BOARD EVALUATION MC56F8323
MC9S12DG128CPVE 功能描述:16位微控制器 - MCU 16 Bit 25MHz RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
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