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参数资料
型号： MC9S12DJ128EMPV
厂商： MOTOROLA INC
元件分类： 微控制器/微处理器
英文描述： 16-BIT, FLASH, 25 MHz, MICROCONTROLLER, PQFP112
封装： LQFP-112
文件页数： 15/138页
文件大小： 2093K
代理商： MC9S12DJ128EMPV
MC9S12DT128 Device User Guide — V02.11
111
A.3 NVM, Flash and EEPROM
NOTE:
Unless otherwise noted the abbreviation NVM (Non Volatile Memory) is used for
both Flash and EEPROM.
A.3.1 NVM timing
The time base for all NVM program or erase operations is derived from the oscillator. A minimum
oscillator frequency fNVMOSC is required for performing program or erase operations. The NVM modules
do not have any means to monitor the frequency and will not prevent program or erase operation at
frequencies above or below the specified minimum. Attempting to program or erase the NVM modules at
a lower frequency a full program or erase transition is not assured.
The Flash and EEPROM program and erase operations are timed using a clock derived from the oscillator
using the FCLKDIV and ECLKDIV registers respectively. The frequency of this clock must be set within
the limits specified as fNVMOP.
The minimum program and erase times shown in Table A-11 are calculated for maximum fNVMOP and
maximum fbus. The maximum times are calculated for minimum fNVMOP and a fbus of 2MHz.
A.3.1.1 Single Word Programming
The programming time for single word programming is dependant on the bus frequency as a well as on
the frequency fNVMOP and can be calculated according to the following formula.
A.3.1.2 Row Programming
This applies only to the Flash where up to 32 words in a row can be programmed consecutively by keeping
the command pipeline filled. The time to program a consecutive word can be calculated as:
The time to program a whole row is:
Row programming is more than 2 times faster than single word programming.
A.3.1.3 Sector Erase
Erasing a 512 byte Flash sector or a 4 byte EEPROM sector takes:
t
swpgm
9
1
f
NVMOP
---------------------
25
1
f
bus
----------
+
=
t
bwpgm
4
1
f
NVMOP
---------------------
9
1
f
bus
----------
+
=
t
brpgm
t
swpgm
31 t
bwpgm
+
=
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相关代理商/技术参数
参数描述
MC9S12DJ128MFUE 功能描述:16位微控制器 - MCU 128K FLASH HCS12 MCU RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
MC9S12DJ128MPVE 功能描述:16位微控制器 - MCU 128K FLASH HCS12 MCU RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
MC9S12DJ128VFUE 功能描述:16位微控制器 - MCU 128K FLASH HCS12 MCU RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
MC9S12DJ128VFUR2 制造商:Freescale Semiconductor 功能描述:16-BIT HCS12 CISC 128KB FLASH 2.5V/5V 80-PIN PQFP T/R - Tape and Reel
MC9S12DJ128VPVE 功能描述:16位微控制器 - MCU 128K FLASH HCS12 MCU RoHS:否 制造商:Texas Instruments 核心:RISC 处理器系列:MSP430FR572x 数据总线宽度:16 bit 最大时钟频率:24 MHz 程序存储器大小:8 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:2 V to 3.6 V 工作温度范围:- 40 C to + 85 C 封装 / 箱体:VQFN-40 安装风格:SMD/SMT
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