参数资料
型号: MC9S12DT512CPVR2
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 微控制器/微处理器
英文描述: 16-BIT, FLASH, 25 MHz, MICROCONTROLLER, PQFP112
封装: ROHS COMPLIANT, LQFP-112
文件页数: 4/124页
文件大小: 4657K
代理商: MC9S12DT512CPVR2
MC9S12DP512 Device Guide V01.25
101
A.3.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed
Table A-12 NVM Reliability Characteristics1
NOTES:
1. TJavg will not exeed 85°C considering a typical temperature profile over the lifetime of a consumer, industrial or automotive
application.
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max
Unit
Flash Reliability Characteristics
1C
Data retention after 10,000 program/erase cycles at
an average junction temperature of TJavg
85°C
tFLRET
15
1002
2. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25
°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618.
Years
2C
Data retention with <100 program/erase cycles at an
average junction temperature TJavg
85°C
20
1002
3C
Number of program/erase cycles
(–40
°C
T
J
0°C)
nFL
10,000
Cycles
4C
Number of program/erase cycles
(0
°C
T
J
140°C)
10,000
100,0003
3. Spec table quotes typical endurance evaluated at 25
°C for this product family, typical endurance at various temperature can
be estimated using the graph below. For additional information on how Freescale defines Typical Endurance, please refer
to Engineering Bulletin EB619.
EEPROM Reliability Characteristics
5C
Data retention after up to 100,000 program/erase
cycles at an average junction temperature of
TJavg
85°C
tEEPRET
15
1002
Years
6C
Data retention with <100 program/erase cycles at an
average junction temperature TJavg
85°C
20
1002
7C
Number of program/erase cycles
(–40
°C
T
J
0°C)
nEEP
10,000
Cycles
8C
Number of program/erase cycles
(0
°C < TJ
140°C)
100,000
300,0003
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