参数资料
型号: MC9S12H256VPVE
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 微控制器/微处理器
英文描述: 16-BIT, FLASH, 16 MHz, MICROCONTROLLER, PQFP112
封装: LQFP-112
文件页数: 7/130页
文件大小: 527K
代理商: MC9S12H256VPVE
MC9S12H256 Device User Guide — V01.20
104
A.3.1.3 Sector Erase
Erasing a 512 byte Flash sector or a 4 byte EEPROM sector takes:
The setup time can be ignored for this operation.
A.3.1.4 Mass Erase
Erasing a NVM block takes:
The setup time can be ignored for this operation.
A.3.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
Table A-11 NVM Timing Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max
Unit
1
D External Oscillator Clock
fNVMOSC
0.5
32 1
NOTES:
1. Restrictions for oscillator in crystal mode apply!
MHz
2
D Bus frequency for Programming or Erase Operations
fNVMBUS
1
MHz
3
D Operating Frequency
fNVMOP
150
200
kHz
4
P Single Word Programming Time
tswpgm
46 2
2. Minimum Programming times are achieved under maximum NVM operating frequency fNVMOP and maximum bus frequency
fbus.
74.5 3
3. Maximum Erase and Programming times are achieved under particular combinations of fNVMOP and bus frequency fbus.
Refer to formulae in Sections A.3.1.1 - A.3.1.4 for guidance.
s
5D Flash Burst Programming consecutive word 4
4. urst Programming operations are not applicable to EEPROM
tbwpgm
20.4 2
31 3
s
6D Flash Burst Programming Time for 32 Words 4
tbrpgm
678.4 2
1035.5 3
s
7
P Sector Erase Time
tera
20 5
5. Minimum Erase times are achieved under maximum NVM operating frequency fNVMOP.
26.7 3
ms
8
P Mass Erase Time
tmass
100 5
133 3
ms
t
era
4000
1
f
NVMOP
---------------------
t
mass
20000
1
f
NVMOP
---------------------
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