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参数资料
| 型号： | MCA3703 |
| 厂商： | SEMELAB LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | HERMETIC SEALED, CERAMIC, LCC-18 |
| 文件页数： | 2/2页 |
| 文件大小： | 20K |
| 代理商： | MCA3703 |
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
nA
A
S ( )
pF
nC
ns
A
V
ns
C
MCA3703
Document Number 5519
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
100
2.0
4.0
100
-100
25
250
0.70
0.80
0.86
180
82
15
7.5
20
25
40
1.0
4.0
1.5
200
0.83
VGS = 0
ID = 1mA
VDS = VGS
ID = 250A
VGS = 20V
VGS = -20V
VDS = 80V.
VGS =0
TC = 125°C
VGS = 10V
ID = 0.6A
VGS = 10V
ID = 1.0A
VDS = 15V
IDS = 0.6A
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
VDS = 50V
IDS = 1.0A
VDD = 50V
ID = 1.0A
RG = 24
(MOSFET switching times are essentially
independent of operating temperature.)
Modified MOS POWER
symbol showing the intergal
P-N junction rectifier.
IS = 1.0A
VGS = 0
IF =1.0A
TJ = 25°C
di / dt = 100A/sVDD = 50V
ELECTRICAL CHARACTERISTICS FOR EACH CHIP(Tcase = 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Gate Threshold Voltage
Gate – Source Leakage Forward
Gate – Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain Source On-State
Resistance*
Forward Transductance *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current Body
Diode
Source Current* (Body Diode)
Diode Forward Voltage *
Reverse Recovery Time
Reverse Recovery Charge
BVDSS
VGS(th)
IGSSF
IGSSR
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
QRR
BODY– DRAIN DIODE RATINGS & CHARACTERISTICS
,
5
/
Notes
* Pulse Test: Pulse Width
≤ 300s, δ≤ 2%
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